STWA40N95K5 STMicroelectronics

STWA40N95K5 N-channel 950 V, 0.110 typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V R max I P DS DS(on) D TOT STWA40N95K5 950 V 0.130 38 A 450 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Figure 1: Internal schematic diagram D(2, TAB) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic G(1) reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 Table 1: Device summary Order code Marking Package Packaging STWA40N95K5 40N95K5 TO-247 Tube August 2015 DocID028207 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STWA40N95K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 TO-247 long leads package information ......................................... 10 5 Revision history ............................................................................ 12 2/13 DocID028207 Rev 1