Product Information

STWA48N60DM2

STWA48N60DM2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.0496 ea
Line Total: USD 6.05

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STWA48N60DM2
STMicroelectronics

1 : USD 6.0496
10 : USD 4.9298
30 : USD 4.1191
100 : USD 2.9667
500 : USD 2.8683
1000 : USD 2.8203

0 - WHS 2


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

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STWA48N60DM2
STMicroelectronics

1 : USD 11.1221
10 : USD 9.6519

0 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

STWA48N60DM2
STMicroelectronics

1 : USD 13.8542
2 : USD 9.0778
3 : USD 9.0643
5 : USD 8.5757

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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The STWA48N60DM2 from STMicroelectronics is a MOSFET Power MOSFET, with an N-channel construction, rated for 600 V, 0.065 O (typ.), 40 A and packaged in a TO-247 long lead package. It features STMicroelectronics' MDmesh™ DM2 technology, which offers up to 30% higher efficiency compared to previous technologies, even in high current applications. This FET is suitable for applications such as motor control and power converters. It has very low gate charge and very low on-resistance for low switching losses. It also features a fast body diode and a fast recovery rear gate capacitor to reduce switching energy losses. The package features a wide body SOA and a high thermal performance to effectively dissipate heat and allow for operation at high temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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