STW72N60DM2AG STMicroelectronics

STW72N60DM2AG Automotive-grade N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STW72N60DM2AG 600 V 0.042 66 A 446 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capacitance Low on-resistance TO-247 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode G(1) series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) AM01476v1 tab Table 1: Device summary Order code Marking Package Packing STW72N60DM2AG 72N60DM2 TO-247 Tube October 2016 DocID027314 Rev 5 1/12 www.st.com This is information on a product in full production. Contents STW72N60DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID027314 Rev 5