Product Information

STW72N60DM2AG

STW72N60DM2AG electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 42A; 446W; TO247
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 25.3202 ea
Line Total: USD 25.32

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

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STW72N60DM2AG
STMicroelectronics

1 : USD 22.4581
10 : USD 19.9055
100 : USD 16.8112
500 : USD 14.9548
1000 : USD 13.7171

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 600
Multiples : 600

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STW72N60DM2AG
STMicroelectronics

600 : USD 9.7349

0 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STW72N60DM2AG
STMicroelectronics

1 : USD 12.9668
10 : USD 11.4436

0 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STW72N60DM2AG
STMicroelectronics

1 : USD 9.6054
3 : USD 8.6343
10 : USD 8.6244

Read More Specifications

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain Current
Gate-Source Voltage
Drain-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

STW72N60DM2AG Automotive-grade N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STW72N60DM2AG 600 V 0.042 66 A 446 W AEC-Q101 qualified 3 Fast-recovery body diode 2 Extremely low gate charge and input 1 capacitance Low on-resistance TO-247 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications D(2, TAB) Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode G(1) series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) AM01476v1 tab Table 1: Device summary Order code Marking Package Packing STW72N60DM2AG 72N60DM2 TO-247 Tube October 2016 DocID027314 Rev 5 1/12 www.st.com This is information on a product in full production. Contents STW72N60DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID027314 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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