STWA20N95K5 STMicroelectronics

STWA20N95K5 N-channel 950 V, 0.275 typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 long leads package Datasheet - production data Features P Order code V R max. I TOT DS DS(on) D 250 W STWA20N95K5 950 V 0.330 17.5 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Figure 1: Internal schematic diagram D(2) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic G(1) reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 No tab Table 1: Device summary Order code Marking Package Packing STWA20N95K5 20N95K5 TO-247 long leads Tube January 2017 DocID025573 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STWA20N95K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-247 long leads package information ......................................... 10 5 Revision history ............................................................................ 12 2/13 DocID025573 Rev 2