Product Information

STWA20N95K5

STWA20N95K5 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 950V .275Ohm 17.5A Zener-protect

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0 - WHS 1

MOQ : 600
Multiples : 1

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STWA20N95K5
STMicroelectronics

600 : USD 6.5819
1000 : USD 6.5156
2000 : USD 6.4506
2500 : USD 6.3869
3000 : USD 6.3219
4000 : USD 6.2595
5000 : USD 6.1971
10000 : USD 6.1347
20000 : USD 6.0736
50000 : USD 6.0125
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MOQ : 1
Multiples : 1

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STWA20N95K5
STMicroelectronics

1 : USD 17.0081
10 : USD 14.8216
100 : USD 12.271
500 : USD 10.6854
1000 : USD 9.3066
2000 : USD 8.9919
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MOQ : 1
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STWA20N95K5
STMicroelectronics

1 : USD 8.9283
10 : USD 5.9341
25 : USD 5.6648
100 : USD 5.0642
500 : USD 4.4842
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MOQ : 1
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STWA20N95K5
STMicroelectronics

1 : USD 10.4619
3 : USD 7.1239
7 : USD 6.7304
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MOQ : 6
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STWA20N95K5
STMicroelectronics

6 : USD 4.8525
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MOQ : 6
Multiples : 1

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STWA20N95K5
STMicroelectronics

6 : USD 4.8525
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STWA20N95K5 N-channel 950 V, 0.275 typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 long leads package Datasheet - production data Features P Order code V R max. I TOT DS DS(on) D 250 W STWA20N95K5 950 V 0.330 17.5 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Figure 1: Internal schematic diagram D(2) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic G(1) reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01476v1 No tab Table 1: Device summary Order code Marking Package Packing STWA20N95K5 20N95K5 TO-247 long leads Tube January 2017 DocID025573 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STWA20N95K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-247 long leads package information ......................................... 10 5 Revision history ............................................................................ 12 2/13 DocID025573 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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