STY105NM50N STMicroelectronics

STY105NM50N N-channel 500 V, 0.019 typ., 110 A, MDmesh II Power MOSFET in a Max247 package Datasheet - production data Features V DSS Order code R max I DS(on) D T jMAX STY105NM50N 550 V < 0.022 110 A Max247 worldwide best R DS(on) 100% avalanche tested 3 2 Low input capacitance and gate charge 1 Low gate input resistance Max247 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds * lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STY105NM50N 105NM50N Max247 Tube July 2013 Doc ID 022226 Rev 3 1/13 This is information on a product in full production. www.st.comContents STY105NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 022226 Rev 3