Product Information

B0530WS RRG

B0530WS RRG electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers SOD-323F 30V 2A Schottky Diode
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3512 ea
Line Total: USD 0.35

3213 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7666 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

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B0530WS RRG
Taiwan Semiconductor

1 : USD 0.3713
10 : USD 0.2551
100 : USD 0.1056
1000 : USD 0.0759
3000 : USD 0.0617
9000 : USD 0.0534
24000 : USD 0.0522
45000 : USD 0.0463
99000 : USD 0.0451

Read More Specifications

     
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Product Category
RoHS - XON
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Additional Infomation About Product

B0530WS Taiwan Semiconductor 200mW, 0.47V Schottky Barrier Diode FEATURES KEY PARAMETERS Designed for mounting on small surface PARAMETER VALUE UNIT Low Capacitance I 500 mA F(AV) Low forward voltage drop V 30 V RRM Compliant to RoHS directive 2011/65/EU and I 5 A in accordance to WEEE 2002/96/EC FSM Halogen-free according to IEC 61249-2-21 V at I =500mA 0.47 V F F T Max. 125 C APPLICATIONS J Adapters Package SOD-323F For switching power supply Configuration Single dice Low stored charge Inverter MECHANICAL DATA Case: SOD-323F Molding compound meets UL 94 V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 4.85 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL B0530WS UNIT Marking code on the device B3 Repetitive peak reverse voltage V 30 V RRM Forward current I 200 mA F(AV) Non-repetitive peak forward surge current t = 8.3ms I 5 A FSM Junction temperature range T -65 to +125 C J Storage temperature range T -65 to +125 C STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 426 C/W JA 1 Version:J1709 B0530WS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 100mA, T = 25C 0.36 F J (1) - Forward voltage per diode V V F I = 500mA, T = 25C 0.47 F J - 80 V =15V T = 25C R J Reverse current rated V per R - 100 V =20V T = 25C I A R J R (2) diode - 500 V =30V T = 25C R J 1 MHz, V =0V - 160 Junction capacitance C pF R J Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PACKING PACKING CODE PART NO. PACKAGE PACKING CODE SUFFIX 3K / 7 Reel RR B0530WS G SOD-323F (Note 1) 10K / 13 Reel R9 Notes: 1. Whole series with green compound EXAMPLE PACKING CODE EXAMPLE P/N PART NO. PACKING CODE DESCRIPTION SUFFIX B0530WS RRG B0530WS RR G Green compound 2 Version:J1709

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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