TSM018NB03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 194A, 1.8m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 30 V DS 100% UIS and R tested g R V = 10V 1.8 GS DS(on) 175C Operating Junction Temperature m (max) V = 4.5V 2.8 RoHS Compliant GS Halogen-free according to IEC 61249-2-21 Q 62 nC g APPLICATIONS DC-DC Converter Battery Management Load Switch Motor Drive PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T = 25C 194 C (Note 1) Continuous Drain Current I A D T = 25C 29 A Pulsed Drain Current I 776 A DM (Note 2) Single Pulse Avalanche Current I 52 A AS (Note 2) Single Pulse Avalanche Energy E 406 mJ AS T = 25C 136 C Total Power Dissipation P W D T = 125C 45 C T = 25C 3.1 A Total Power Dissipation P W D T = 125C 1 A Operating Junction and Storage Temperature Range T , T - 55 to +175 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Junction to Case Thermal Resistance R 1.1 C/W JC Junction to Ambient Thermal Resistance R 48 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JC CA 2 determined by the users board design. The R limit presented here is based on mounting on a 1 in pad of 2 oz copper. JA 1 Version: A1910 TSM018NB03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 1.8 2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 30V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 30V DSS GS DS -- -- 100 T = 125C J V = 10V, I = 29A -- 1.4 1.8 Drain-Source On-State Resistance GS D R m DS(on) (Note 3) V = 4.5V, I = 24A -- 2.1 2.8 GS D (Note 3) V = 10V, I = 29A Forward Transconductance g -- 70 -- S DS D fs (Note 4) Dynamic V = 10V, V = 15V, GS DS Total Gate Charge Q -- 120 -- g I = 29A D Total Gate Charge Q -- 62 -- g nC V = 4.5V, V = 15V, GS DS Gate-Source Charge Q -- 21 -- gs I = 24A D Gate-Drain Charge Q -- 28 -- gd Input Capacitance C -- 7252 -- iss V = 0V, V = 15V, GS DS Output Capacitance C -- 1056 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 673 -- rss Gate Resistance f = 1.0MHz R 0.5 1.8 3.6 g (Note 4) Switching Turn-On Delay Time t -- 9 -- d(on) Turn-On Rise Time t -- 50 -- r V = 10V, V = 15V, GS DS ns Turn-Off Delay Time I = 29A, R = 2 t -- 80 -- D G d(off) Turn-Off Fall Time t -- 45 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- 1 V V = 0V, I = 29A SD GS S Reverse Recovery Time t -- 48 -- ns rr I = 29A, S Reverse Recovery Charge Q -- 50 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 25V, R = 25, I = 52A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM018NB03CR RLG PDFN56 2,500pcs / 13 Reel 2 Version: A1910