IRF8313TRPBF TECH PUBLIC

IRF8313TRPBF electronic component of TECH PUBLIC
IRF8313TRPBF TECH PUBLIC
IRF8313TRPBF MOSFETs
IRF8313TRPBF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRF8313TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF8313TRPBF MOSFETs are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IRF8313TRPBF
Manufacturer: TECH PUBLIC
Category: MOSFETs
Description: SOP-8 MOSFETs ROHS
Datasheet: IRF8313TRPBF Datasheet (PDF)
Price (USD)
5: USD 0.3962 ea
Line Total: USD 1.98 
Availability : 1949
  
Ship by Wed. 20 Aug to Mon. 25 Aug
QtyUnit Price
5$ 0.3962
50$ 0.346
150$ 0.2191
500$ 0.2009
3000$ 0.1929
6000$ 0.1881

Availability 1949
Ship by Wed. 20 Aug to Mon. 25 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3962
50$ 0.346
150$ 0.2191
500$ 0.2009
3000$ 0.1929
6000$ 0.1881

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the IRF8313TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF8313TRPBF and other electronic components in the MOSFETs category and beyond.

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The IRF8313TRPBF is a top of the range SOP-8 MOSFET manufactured by Techpublic. It is a RoHS compliant surface mountable device constructed with a combination of silicon and metal oxide semiconductor technology. This MOSFET has a drain-source voltage of 100V, with a continuous drain current of 11A and a maximum power dissipation of 200W. It is capable of working in frequencies of up to 100kHz and has a maximum gate-source voltage of ±20V. It has an on-resistance of 0.083O and a fast switching speed, with a maximum rise and fall time of 10ns. This MOSFET is suitable for high power applications and is capable of working in temperatures as high as 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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