XP231P02013R-G Torex Semiconductor

XP231P02013R-G electronic component of Torex Semiconductor
XP231P02013R-G Torex Semiconductor
XP231P02013R-G MOSFETs
XP231P02013R-G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of XP231P02013R-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. XP231P02013R-G MOSFETs are a product manufactured by Torex Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. XP231P02013R-G
Manufacturer: Torex Semiconductor
Category: MOSFETs
Description: MOSFET N-CHANNEL -30V -0.2A
Datasheet: XP231P02013R-G Datasheet (PDF)
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8285
10$ 0.6214
100$ 0.123
500$ 0.0963
1000$ 0.0714
3000$ 0.0621
9000$ 0.0497
24000$ 0.0487
45000$ 0.0404
N/A

   
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We are delighted to provide the XP231P02013R-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XP231P02013R-G and other electronic components in the MOSFETs category and beyond.

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XP231P02013R-G ETR11051-001 P-channel MOSFET -30V, -0.2A FEATURES APPLICATIONS On-State Resistance : RDS(on)5 VGS =-4.5V Switching Driving voltage : -2.5V Environmentally Friendly : EU RoHS Compliant, Pb Free EQUIVALENT CIRCUIT PIN CONFIGURATION SOT-323-3A 3 Drain 3 1 2 Gate Source 1 2 PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP231P02013R-G * SOT-323-3A 3,000 pcs/ Reel * The -G suffix denotes Halogen and Antimony free as well as beingfully EU RoHS compliant ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS 8 V Drain Current (DC) ID -0.2 A (*1) Drain Current (Pulse) IDP -0.4 A (*2) Channel Power Dissipation Pd 0.35 W Junction Temperature TJ 150 Storage Temperature Tstg -55~150 *(1) PW10s,duty cycle1% (*2) When implemented on a PCB defined by JESD51-7 1/6 XP231P02013R-G ELECTRICAL CHARACTERISTICS Ta=25 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain-Source Breakdown Voltage V(BR)DSS ID= -250A, VGS=0V -30 - - V Drain-Source Leakage Current IDSS VDS= -30V, VGS= 0V - - -10 A Gate-Source Leakage Current IGSS VGS= 8V, VDS= 0V - - 10 A Gate Threshold Voltage VGS(off) ID= -250uA, VDS= VGS -0.5 -0.8 -1.2 V VGS= -4.5V, ID= -100mA - 3.2 5 Drain-Source On Resistance RDS(on) VGS= -2.5V, ID= -100mA 4 8 Input Capacitance Ciss - 34 - pF V = -10V, V = 0V DS GS Output Capacitance Coss - 7 - pF f=1MHz Reverse Transfer Capacitance Crss - 2.5 - pF Turn-on Delay Time td(on) - 18 - ns Rise Time tr V = -10V, I = -100mA - 20 - ns DD D VGS= -4.5V Turn-off Delay Time td(off) - 80 - ns Fall Time tf - 45 - ns Diode Forward Voltage VSD IS= -100mA, VGS= 0V - -0.8 -1.2 V NOTES ON USE 1. Please use this IC within the absolute maximum ratings. Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may cause reliability degradation of the IC. 2. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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