XP234N08013R-G Torex Semiconductor

XP234N08013R-G electronic component of Torex Semiconductor
XP234N08013R-G Torex Semiconductor
XP234N08013R-G MOSFETs
XP234N08013R-G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of XP234N08013R-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. XP234N08013R-G MOSFETs are a product manufactured by Torex Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. XP234N08013R-G
Manufacturer: Torex Semiconductor
Category: MOSFETs
Description: MOSFET N-CHANNEL 30V 0.8A
Datasheet: XP234N08013R-G Datasheet (PDF)
Price (USD)
N/A


Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0615
10$ 0.7871
100$ 0.1554
500$ 0.1211
1000$ 0.0901
3000$ 0.0787
N/A

   
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We are delighted to provide the XP234N08013R-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XP234N08013R-G and other electronic components in the MOSFETs category and beyond.

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XP234N08013R-G ETR11056-001a N-channel MOSFET 30V, 0.8A FEATURES APPLICATIONS On-State Resistance : RDS(on)=0.29 VGS =10V Switching Driving voltage : 4.5V Environmentally Friendly : EU RoHS Compliant, Pb Free EQUIVALENT CIRCUIT PIN CONFIGURATION SOT-323-3A 3 Drain 3 1 2 Gate Source 1 2 PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP234N08013R-G * SOT-323-3A 3,000pcs/ Reel * The -G suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 30 V DSS Gate-Source Voltage VGSS 20 V Drain Current (DC) I 0.8 A D (*1) Drain Current(Pulse) IDP 1.6 A (*2) Channel Power Dissipation P 0.35 W d Junction Temperature TJ 150 Storage Temperature T -55~150 stg *(1) PW10s,duty cycle1% *(*2) When implemented on a PCB defined by JESD51-7 1/6 XP234N08013R-G ELECTRICAL CHARACTERISTICS Ta=25 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain-Source Breakdown Voltage V(BR)DSS ID= 250A, VGS= 0V 30 - - V Drain-Source Leakage Current IDSS VDS= 30V, VGS= 0V - - 1 A Gate-Source Leakage Current IGSS VGS= 15V, VDS= 0V - - 10 A Gate Threshold Voltage VGS(off) ID= 250uA, VDS= VGS 0.9 1.7 2.6 V VGS= 10V, ID= 400mA - 0.2 0.29 Drain-Source On Resistance RDS(on) VGS= 4.5V, ID= 400mA - 0.3 0.4 Input Capacitance Ciss - 64 - pF V = 10V, V = 0V DS GS Output Capacitance Coss - 16 - pF f= 1MHz Reverse Transfer Capacitance Crss - 8 - pF Turn-on Delay Time td(on) - 11 - ns Rise Time tr V = 10V, I = 400mA - 8 - ns DD D VGS= 10V Turn-off Delay Time td(off) - 70 - ns Fall Time tf - 30 - ns Total Gate Charge Qg - 1.32 - nC V = 10V, I = 400mA DS D Gate-Source Charge Qgs - 0.16 - nC VGS= 10V Gate-Drain Charge Qgd - 0.26 - nC Diode Forward Voltage VSD IS= 400mA, VGS= 0V - 0.7 1.1 V NOTES ON USE 1. Please use this IC within the absolute maximum ratings. Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may cause reliability degradation of the IC. 2. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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