Product Information

1SS357(TPH3,F)

1SS357(TPH3,F) electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers Pb-F USC-SBD(LF),ACTIVE,

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0815 ea
Line Total: USD 0.41

9535 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
9535 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 5
Multiples : 5
5 : USD 0.0815
50 : USD 0.0652
150 : USD 0.057
500 : USD 0.0509
3000 : USD 0.0459
6000 : USD 0.0435

29429 - WHS 2


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 288
Multiples : 1
288 : USD 0.3085
500 : USD 0.3003
1000 : USD 0.2929
2500 : USD 0.2863
5000 : USD 0.2805

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Packaging
Brand
Max Surge Current
Forward Voltage Drop
Operating Temperature Range
Operating Temp Range
Package Type
Pin Count
Rad Hardened
Peak Rep Rev Volt
Rev Curr
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1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit: mm z Low forward voltage : V = 0.54V (typ.) F (3) z Low reverse current : I = 5A (max) R z Small package : SC-70 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P 200* mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 1-1E1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.004g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 F (2) F V V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R (1) R Total capacitance C V = 0, f = 1MH 18 25 pF T R z Pin Assignment (Top View) Marking Start of commercial production 1990-01 1 2014-03-01 1SS357 2 2014-03-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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