Product Information

1SS389,L3F

1SS389,L3F electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8000: USD 0.0231 ea
Line Total: USD 184.8

7760 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 8000  Multiples: 8000
Pack Size: 8000

 More Buying Options & Price Grid(s)

Availability Price Quantity
2782 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

1SS389,L3F
Toshiba

1 : USD 0.068
10 : USD 0.0673
25 : USD 0.0659
100 : USD 0.0395
250 : USD 0.0387
500 : USD 0.0387
1000 : USD 0.0387

7760 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 8000
Multiples : 8000

Stock Image

1SS389,L3F
Toshiba

8000 : USD 0.0231
16000 : USD 0.0227
32000 : USD 0.0224
48000 : USD 0.0219
64000 : USD 0.0215

43582 - WHS 3


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 10
Multiples : 10

Stock Image

1SS389,L3F
Toshiba

10 : USD 0.0563
100 : USD 0.045
300 : USD 0.0393
1000 : USD 0.0351
5000 : USD 0.0318
8000 : USD 0.03

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : V = 0.54V (typ.) F (3) Low reverse surrent : I = 5A (max) R Small package : SC59 Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O JEDEC TO236MOD Power dissipation P 150 mW JEITA SC59 TOSHIBA 2-3F1S Junction temperature T 125 C j Weight: 12 mg (typ.) Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0 V, f = 1MHz 18 25 pF T R Marking Start of commercial production 1986-03 1 2017-10-19 1SS294 2 2017-10-19

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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