1SS387,L3F(T Toshiba

1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm z Compact 2-pin package ideal for high-density mounting z Low forward voltage : V = 0.98V (typ.) F (3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 0.5pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P 150 * mW Junction temperature T 125 C j JEDEC Storage temperature T 55 to 125 C stg JEITA TOSHIBA 1-1G1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.4mg (typ) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.62 F (1) F Forward voltage V V I = 10mA 0.75 F (2) F V I = 100mA 0.98 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MH 0.5 3.0 pF T R z Reverse recovery time t I = 10mA, Fig.1 1.6 4.0 ns rr F Start of commercial production 1994-11 1 2014-03-01 1SS387 Pin Assignment Fig.1 Reverse Recovery Time (t ) Test Circuit rr (Top View) Marking 2 2014-03-01