Product Information

1SS387,L3F(T

1SS387,L3F(T electronic component of Toshiba

Datasheet
Diode: switching; SMD; 85V; 100mA; 4ns; Package: Reel, tape; SOD523
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0923 ea
Line Total: USD 0.92

45560 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 10  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
45560 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 10
Multiples : 5

Stock Image

1SS387,L3F(T
Toshiba

10 : USD 0.0923
100 : USD 0.0364
500 : USD 0.0325
635 : USD 0.026
1740 : USD 0.0247

43122 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 765
Multiples : 1

Stock Image

1SS387,L3F(T
Toshiba

765 : USD 0.05
1000 : USD 0.0496
2000 : USD 0.0425
8000 : USD 0.038
16000 : USD 0.0369

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Packaging
Pd - Power Dissipation
Features Of Semiconductor Devices
Max Load Current
Capacitance
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Additional Infomation About Product

1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm z Compact 2-pin package ideal for high-density mounting z Low forward voltage : V = 0.98V (typ.) F (3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 0.5pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P 150 * mW Junction temperature T 125 C j JEDEC Storage temperature T 55 to 125 C stg JEITA TOSHIBA 1-1G1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.4mg (typ) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.62 F (1) F Forward voltage V V I = 10mA 0.75 F (2) F V I = 100mA 0.98 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MH 0.5 3.0 pF T R z Reverse recovery time t I = 10mA, Fig.1 1.6 4.0 ns rr F Start of commercial production 1994-11 1 2014-03-01 1SS387 Pin Assignment Fig.1 Reverse Recovery Time (t ) Test Circuit rr (Top View) Marking 2 2014-03-01

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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