Product Information

1SS387CT,L3F(T

1SS387CT,L3F(T electronic component of Toshiba

Datasheet
Diode: switching; SMD; 85V; 100mA; 1.6ns; Package: Reel, tape; SOD882
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

371: USD 0.1031 ea
Line Total: USD 38.25

34016 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 371  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
34016 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 371
Multiples : 1
371 : USD 0.1031
500 : USD 0.1029
1000 : USD 0.0867
2000 : USD 0.082
10000 : USD 0.0725

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Packaging
Pd - Power Dissipation
Features Of Semiconductor Devices
Max Load Current
Capacitance
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Additional Infomation About Product

1SS387CT Switching Diodes Silicon Epitaxial Planar 1SS387CT1SS387CT1SS387CT1SS387CT 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Ultra-High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small package (2) Low forward voltage: V = 0.98 V (typ.) F(3) (3) Fast reverse recovery time: t = 1.6 ns (typ.) rr (4) Small total capacitance: C = 0.5 pF (typ.) t 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode CST2 Start of commercial production 2004-08 2014-04-04 1 Rev.3.01SS387CT 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 R Peak forward current I 200 mA FM Average rectified current I 100 O Non-repetitive peak forward surge current I 1 A FSM Power dissipation P (Note 1) 150 mW D Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. 5. 5. 5. 5. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.62 V F(1) F V I = 10 mA 0.75 F(2) F V I = 100 mA 0.98 1.2 F(3) F Reverse current I V = 30 V 0.1 A R(1) R I V = 80 V 0.5 R(2) R Total capacitance C V = 0 V, f = 1 MHz 0.5 pF t R Reverse recovery time t I = 10 mA 1.6 ns rr F See Fig. 5.1. Fig. Fig. 5.15.1 Reverse recovery time (tReverse recovery time (trrrr) Test circuit) Test circuit Fig. Fig. 5.15.1 Reverse recovery time (tReverse recovery time (trrrr) Test circuit) Test circuit 2014-04-04 2 Rev.3.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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