2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/ h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF (2) = 0.2dB (typ.), 3dB (max) Complementary to 2SA1312 Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C JEDEC TO-236MOD Base current I 20 mA B JEITA SC-59 Collector power dissipation P (Note 1,2) 200 mW C TOSHIBA 2-3F1A Junction temperature T (Note 2) 150 C j Weight: 0.012 g (typ.) Storage temperature range T (Note 2) 55 to 150 C stg Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Note 1: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Note 2: There are products which can support PC: 150mW, Tj: 125 C, Tstg: -55 to 125 C. Please contact our sales for detail information. Marking Start of commercial production 1982-12 2021 2021-05-20 1 Toshiba Electronic Devices & Storage Corporation 2SC3324 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V 120 V, I 0 A 0.1 A CBO CB E Emitter cut-off current I V 5 V, I 0 A 0.1 A EBO EB C h FE DC current gain V 6 V, I 2 mA 200 700 CE C (Note) Collector-emitter saturation voltage V I 10 mA, I 1 mA 0.3 V CE (sat) C B Transition frequency f V 6 V, I 1 mA 100 MHz T CE C Collector output capacitance C V 10 V, I 0 A, f 1 MHz 3 pF ob CB E V 6 V, I 0.1 mA, f 100 Hz, CB C NF (1) 0.5 6 Rg 10 k Noise figure dB V 6 V, I 0.1 mA, f 1 kHz, CB C NF (2) 0.2 3 Rg 10 k Note: h classification GR (G): 200 to 400, BL (L): 350 to 700 FE ( ) marking symbol 2021 2021-05-20 2 Toshiba Electronic Devices & Storage Corporation