Product Information

2SK3569(STA4,X,S)

2SK3569(STA4,X,S) electronic component of Toshiba

Datasheet
MOSFET N Trench 600V 10A 4V @ 1mA 750 mΩ @ 5A,10V SC-67 RoHS
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.7017 ea
Line Total: USD 3.7

77 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
77 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 3.4
10 : USD 2.6514
50 : USD 2.128
100 : USD 1.9333
500 : USD 1.8436
1000 : USD 1.8034

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The 2SK3569 (STA4, X, S) is a MOSFET N Trench manufactured by Toshiba. It has a drain-source withstand voltage of 600V and a continuous drain current of up to 10A. It has a gate-source threshold voltage of 4V and a gate-drain capacitance of 750 mΩ at 5A, 10V. It is also RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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