Product Information

DF3A5.6LFV(TPL3,Z)

DF3A5.6LFV(TPL3,Z) electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Low Capacitance Protection Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.056 ea
Line Total: USD 0.06

9092 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
9092 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.0551
10 : USD 0.0546
25 : USD 0.0524
100 : USD 0.0511
250 : USD 0.0496
500 : USD 0.0484
1000 : USD 0.0474
3000 : USD 0.0474
6000 : USD 0.0474

7304 - WHS 2


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5
5 : USD 0.1462
50 : USD 0.1072
150 : USD 0.084
500 : USD 0.0762
2500 : USD 0.0699
5000 : USD 0.0668

17953 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 635
Multiples : 1
635 : USD 0.0627

9092 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 159
Multiples : 1
159 : USD 0.053
250 : USD 0.0507
500 : USD 0.0484
1000 : USD 0.0474

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD DF3A5.6LFV Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) 1.20.05 0.80.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. 1 The mounting of two devices in an ultra-compact package enables a 2 3 reduction in the number of parts and in the mounting cost. Low terminal capacitance: C = 8.0 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Unit Characteristic Symbol Rating Power dissipation P 150* mW 1. CATHODE1 Junction temperature T 150 C VESM j 2. CATHODE2 3. ANODE Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1Q1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 1.5 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mmt) 0.5 mm 0.45 mm 0.45 mm 0.4 mm Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 5.3 5.6 6.0 V Z Z Dynamic impedance Z I = 5 mA 3 Z Z Reverse current I V = 3.5 V 1.0 A R R Terminal capacitance C V = 0 V, f = 1 MHz 8 pF R T (between cathode and anode) Start of commercial production 2005-05 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.22 0.05 0.13 0.05 0.32 0.05 DF3A5.6LFV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (top view) Q2 Q1 AU C V T R I V Z Z 10 100 m Ta = 25C f = 1 MHz 10 m 1 m 100 10 1 1 4 6 0 1 2 4 0 1 2 3 5 7 8 9 10 3 5 6 7 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2 2014-03-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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