Product Information

HN1D03FU,LF

HN1D03FU,LF electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching High Speed Switching Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1143 ea
Line Total: USD 1.11

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

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HN1D03FU,LF
Toshiba

1 : USD 1.1143
10 : USD 0.8246
100 : USD 0.1883
500 : USD 0.1215
1000 : USD 0.0936
3000 : USD 0.0724
9000 : USD 0.0646
24000 : USD 0.0602
45000 : USD 0.0546

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RoHS - XON
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Additional Infomation About Product

HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Ultra High Speed Switching Application Unit: mm AEC-Q101 Qualified (Note1) Built in anode common and cathode common. Note1: For detail information, please contact our sales Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90 V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6 ns (typ.) Small total capacitance Q1, Q2: CT = 0.9 pF (typ.) Unit 2 Low forward voltage Q3, Q4: VF (3) = 0.92 V (typ.) Fast reverse recovery time Q3, Q4: trr = 1.6 ns (typ.) Small total capacitance Q3, Q4: CT = 2.2 pF (typ.) Unit 1, Unit 2 Common Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM US6 Reverse voltage V 80 V R Maximum (peak) forward current I 300 (*) mA FM JEITA Average forward current I 100 (*) mA O TOSHIBA 1-2T1D Surge current (10 ms) I 2 (*) A Weight: 6.2mg (typ.) FSM Power dissipation P (Note 4) 200 mW D Junction temperature T (Note 2) 150 C j T (Note 3) 125 j Storage temperature T (Note 2) 55 to 150 C stg T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm 6). (*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single diode. Start of commercial production 1992-05 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation HN1D03FU Marking Pin Assignment (Top View) Fig.1 Reverse Recovery Time (t ) Test Circuit rr Unit 1 Electrical Characteristics (Q1, Q2 Common) (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.60 F (1) F Forward voltage V I = 10 mA 0.72 F (2) F V V I = 100 mA 0.90 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 3.0 pF T R Reverse recovery time t I =10 mA (fig.1) 1.6 4.0 ns rr F Unit 2 Electrical Characteristics (Q3, Q4 Common) (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.61 F (1) F Forward voltage V I = 10 mA 0.74 V F (2) F V I = 100 mA 0.92 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 2.2 4.0 pF T R Reverse recovery time t I =10 mA (fig.1) 1.6 4.0 ns rr F 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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