HN2D01FU(TE85L,F)

HN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit: mm Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) HN2D01FU is composed of 3 independent diodes. Low forward voltage: V = 0.98V (typ.) F (3) Fast reverse recovery time: t = 1.6ns (typ.) rr Small total capacitance: C = 0.5pF (typ.) T Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 240 * mA FM US6 Average forward current I 80 * mA O Surge current (10ms) I 1 * A JEDEC FSM Power dissipation P (Note 4) 200 mW JEITA D Junction temperature T (Note 2) 150 C j TOSHIBA 2-2J1S T (Note 3) 125 Weight: 6.2mg (typ.) j Storage temperature T (Note 2) 55 to 150 C stg Tstg (Note 3) 55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. 2 Note 4: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.32 mm 6). *: This is absolute maximum rating of single diode (Q1, Q2 or Q3). In the case of using 2 or 3 diodes, the absolute maximum ratings per diodes is 75 of the single diode one. Start of commercial production 1990-10 1 2020-2021 2021-06-25 Toshiba Electronic Devices & Storage Corporation HN2D01FU Electrical Characteristics = (Q1, Q2, Q3 Common, Ta 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.62 F (1) F Forward voltage V I = 10 mA 0.75 V F (2) F V I = 100 mA 0.98 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V , f = 1 MH 0.5 3.0 pF T R z Reverse recovery time trr I = 10 mA (Fig.1) 1.6 4.0 ns F Pin Assignment (Top View) Marking Fig.1 Reverse Recovery Time (trr) Test Circuit 2 2020-2021 2021-06-25 Toshiba Electronic Devices & Storage Corporation