HN4D02JU(TE85L,F) Toshiba

HN4D01JU TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU Ultra High Speed Switching Applications Unit: mm z Low forward voltage : V = 0.92V (typ.) F (3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 2.2pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300* mA FM Average forward current I 100* mA O Surge current (10ms) I 2* A FSM Power dissipation P 200** mW Junction temperature T 150 C j Storage temperature T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba JEDEC Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual EIAJ reliability data (i.e. reliability test report and estimated failure rate, TOSHIBA etc). *: Unit rating. Total rating = unit rating 1.5 Weight: 0.0062 g (typ.) ** :Total rating Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.61 F (1) F Forward voltage V I = 10mA 0.74 V F (2) F V I = 100mA 0.92 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 2.2 pF T R Reverse recovery time t I = 10mA, Fig.1 1.6 ns rr F Fig.1 Reverse Recovery Time (t ) Test Circuit rr Start of commercial production 2001-03 1 2014-03-01 HN4D01JU Equivalent Circuit (Top View) Marking Unit 1 Unit 2 5 4 A 1 1 2 3 2 2014-03-01