QN4101M6N uPI Semiconductor

QN4101M6N electronic component of uPI Semiconductor
QN4101M6N uPI Semiconductor
QN4101M6N MOSFETs
QN4101M6N  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of QN4101M6N MOSFETs across the USA, India, Europe, Australia, and various other global locations. QN4101M6N MOSFETs are a product manufactured by uPI Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. QN4101M6N
Manufacturer: uPI Semiconductor
Category: MOSFETs
Description: MOSFET PRPAK5*6 RoHS
Datasheet: QN4101M6N Datasheet (PDF)
Price (USD)
1: USD 0.7099 ea
Line Total: USD 0.71 
Availability : 0
  
QtyUnit Price
1$ 0.7099
10$ 0.526
30$ 0.4908
100$ 0.4581
500$ 0.4426
1000$ 0.4362

Availability 0
Ship by Tue. 11 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7099
10$ 0.526
30$ 0.4908
100$ 0.4581
500$ 0.4426
1000$ 0.4362

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QN4101M6N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QN4101M6N and other electronic components in the MOSFETs category and beyond.

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The QN4101M6N is a PRPAK5*6 RoHS MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by uPI Semiconductor. It is designed for basic switching and low-level amplification applications. The transistor has an N-Channel MOSFET with a drain-source voltage of 40V and a max current of 2.6A. The device has superior RDS(on) so it can be used in many high efficiency applications like DC-DC converters, motor-control, sensors, and lighting applications. The device is RoHS complaint and comes with a lead-free finish.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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