The QN3106M6N with PRPAK(5x6) MOSFETs ROHS manufactured by uPI Semiconductor is a surface mount power MOSFET device with drain-source breakdown voltage up to 50V. It is built using advanced plastic-encapsulated insulated gate technology and comes in a five-pin PRPAK (5x6) surface mount package. It features a low gate threshold voltage, low on-state resistance, low gate charge, high input impedance, and excellent avalanche energy absorption capability. The QN3106M6N is designed for use in high-frequency switching applications, such as boost converters, DC-DC converters, OR-ing diodes, and charge-discharge circuits. The device is manufactured in accordance with RoHS standards and is guaranteed for superior performance and reliability.