VBMB16R08 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Q results in simple drive g V (V) 600 DS Available requirement R ( )V = 10 V 1.0 DS(on) GS Improved gate, avalanche and dynamic dV/dt Available Q max. (nC) 49 g ruggedness Q (nC) 13 gs Fully characterized capacitance and avalanche voltage Q (nC) 20 gd and current Configuration Single APPLICATIONS Switch mode power supply (SMPS) D Uninterruptible power supply TO-220 FULLPAK High speed power switching APPLICABLE OFF LINE SMPS TOPOLOGIES G Active clamped forward Main switch S N-Channel MOSFET S D G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 8.0 C Continuous Drain Current V at 10 V I GS D T = 100 C 5.8 A C a Pulsed Drain Current I 37 DM Linear Derating Factor 1.3 W/C b Single Pulse Avalanche Energy E 290 mJ AS a Repetitive Avalanche Current I 8.0 A AR a Repetitive Avalanche Energy E 17 mJ AR Maximum Power Dissipation T = 25 C P 37 W C D c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 6.8 mH, R = 25 , I = 9.2 A (see fig. 12). J g AS c. I 9.2 A, dI/dt 50 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. 1VBMB16R08 www.VBsemi.com THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -0.75 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 660 - mV/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 5.5 A - 1.0 1.1 DS(on) GS D Forward Transconductance g V = 50 V, I = 5.5 A 5.5 - - S fs DS D Dynamic Input Capacitance C V = 0 V, - 1400 - iss GS Output Capacitance C -180- oss V = 25 V, DS Reverse Transfer Capacitance C -7.1- rss f = 1.0 MHz, see fig. 5 pF V = 1.0 V, f = 1.0 MHz - 1957 - DS Output Capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 49 - GS DS Effective Output Capacitance C eff. V = 0 V to 480 V - 96 - oss DS Total Gate Charge Q -- 49 g I = 8.0A, V = 400 V D DS Gate-Source Charge Q --V = 10 V 13 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --20 gd Turn-On Delay Time t -13 - d(on) Rise Time t -25 - V = 300 V, I = 8.0 A r DD D ns Turn-Off Delay Time t -30- d(off) b R = 9.1 , R = 35.5 , see fig. 10 g D Fall Time t -22- f Gate Input Resistance R f = 1 MHz, open drain 0.5 - 3.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 9.2 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 37 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 8.0 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 530 800 ns rr b T = 25 C, I = 8.0 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.0 4.4 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C effective is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS 2