GOFORD GT45N06 General Features RDS(ON) RDS(ON) VDSS ID 10V (typ) 4.5V (typ) 6.8 9.5m 60V m 45A Split Gate Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fast-switching applications RoHS Compliant Top View Applications D D D D D D Synchronus Rectification in DC/DC and AC/DC D Pin1 D Converters S G S Industrial and Motor Drive applications S S S G S Pin1 DFN 3x3-8L Ordering Information Part Number Case Marking Packaging GT45N06 DFN3*3-8L 3000pcs/Reel GT45N06 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 60 V DS V Gate-Source Voltage V 20 GS TA=25C Continuous Drain 45 I A D G T =100C Current A 25 C Pulsed Drain Current I A 80 DM C E mJ Avalanche energy L=0.5mH 180 AS T =25C 50 A A P W Power Dissipation DSM T =100C 20 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Maximum Units A C/W Maximum Junction-to-Ambient t 10s 18 22 R JA A D C/W Maximum Junction-to-Ambient Steady-State 55 72 Maximum Junction-to-Case Steady-State R 2.1 2.5 C/W JC Page 1 HTTP://www.gofordsemi.com T EL 0755 - 2 9 961262 F A X 0755 - 2996 146 6GOFORD GT45N06 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 60 65 V D GS DSS V =60V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V =20V 100 nA GSS DS GS V =V , I =250A V Gate Threshold Voltage 1.1 1.7 2.5 V GS(th) DS GS D V =10V, I =20A 6.8 8.2 GS D m R DS(ON) Static Drain-Source On-Resistance V =4.5V, I =20A 9.5 12.0 m GS D V =5V, I =20A g Diode Forward Voltage 300 S FS DS D I =20A,V =0V V Diode Forward Voltage 0.85 0.99 V S GS SD G I Maximum Body-Diode Continuous Current 53 A S DYNAMIC PARAMETERS C Input Capacitance 1988 pF iss V =0V, V =30V, f=1MHz C Output Capacitance 470 pF GS DS oss C Reverse Transfer Capacitance 14 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.6 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 31 nC g Q (4.5V) Total Gate Charge 16 nC g V =10V, V =30V, I =20A GS DS D Q Gate Source Charge 6 nC gs Q Gate Drain Charge 5 nC gd t Turn-on Delay Time 10.5 ns D(on) t Turn-on Rise Time V =10V, V =15V, R =2.5, 4.5 ns r GS DS L R =3 t Turn-off Delay Time 29.5 ns GEN D(off) t Turn-off Fall Time 8 ns f I =202A,di/dt=500A/s t Body Diode Reverse Recovery Time F 17 ns rr I =202A,di/dt=500A/s Q Body Diode Reverse Recovery charge 58 F rr nC A.ThevalueofRJAismeasuredwiththedevicemountedon1in2FR4boardwith2oz.Copper,inastillairenvironmentwithTA =25C.ThePower dissipationPDSM isbasedonRJAt10sandthemaximumallowedjunctiontemperatureof150C.Thevalueinanygivenapplicationdependson theuser sspecificboarddesign. B.ThepowerdissipationPD isbasedonTJ(MAX)=150C,usingjunctiontocasethermalresistance,andismoreusefulinsettingtheupperdissipation limitforcaseswhereadditionalheatsinkingisused. C.SinglepulsewidthlimitedbyjunctiontemperatureTJ(MAX)=150C. D.TheRJAisthesumofthethermalimpedancefromjunctiontocaseRJCandcasetoambient. E.ThestaticcharacteristicsinFigures1to6areobtainedusing<300spulses,dutycycle0.5%max. F.Thesecurvesarebasedonthejunctiontocasethermalimpedancewhichismeasuredwiththedevicemountedtoalargeheatsink,assuminga maximumjunctiontemperatureofTJ(MAX)=150C.TheSOAcurveprovidesasinglepulserating. G.Themaximumcurrentratingispackagelimited. Page 2 HTTP://www.gofordsemi.com T EL 0755 - 2 9 961262 F A X 0755 - 2996 146 6