X-On Electronics has gained recognition as a prominent supplier of GT12N06S MOSFETs across the USA, India, Europe, Australia, and various other global locations. GT12N06S MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

GT12N06S GOFORD

GT12N06S electronic component of GOFORD
GT12N06S GOFORD
GT12N06S MOSFETs
GT12N06S  Semiconductors

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See Product Specifications
Part No. GT12N06S
Manufacturer: GOFORD
Category: MOSFETs
Description: MOSFET SOP-8 RoHS
Datasheet: GT12N06S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6963 ea
Line Total: USD 0.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 03 Jun to Fri. 06 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6963
10 : USD 0.5746
30 : USD 0.4869
100 : USD 0.4139
500 : USD 0.4018
1000 : USD 0.3969

   
Manufacturer
Product Category
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Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GT12N06S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT12N06S and other electronic components in the MOSFETs category and beyond.

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The GT12N06S MOSFET SOP-8 RoHS is a metal oxide semiconductor field effect transistor (MOSFET) manufactured by GOFORD. It is a high voltage MOSFET with properties similar to a conventional N-Channel MOSFET. This device features low on-state resistance, high switching speed, low capacitance, and good temperature stability compared to other MOSFETs. The device has an SOP-8 RoHS package and is rated for a maximum drain-source voltage of 600V, a drain-source current of 12A, a maximum gate-source voltage of 30V, and a maximum operating temperature of 150°C. The device can be used for a wide range of applications from switching to power management. It is an excellent choice for applications in which space is limited such as those found in automotive and industrial electronics.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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