1N4148W-HE3-18

1N4148W www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diodes AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4148W-E3-08 or 1N4148W-E3-18 1N4148W A2 Single Tape and reel 1N4148W-HE3-08 or 1N4148W-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 V R Repetitive peak reverse voltage V 100 V RRM Average rectified current half wave rectification with f 50 Hz I 150 mA F(AV) (1) resistive load t < 1 s I 500 mA p FSM Surge forward current t = 1 s I 2A p FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 357 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature. Rev. 1.8, 23-Feb-18 Document Number: 85748 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N4148W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 10 mA V 1V F F Forward voltage I = 100 mA V 1.2 V F F V = 20 V I 25 nA R R V = 75 V I 5A R R Leakage current V = 100 V I 100 A R R V = 20 V, T = 150 C I 50 A R J R Diode capacitance V = V = 0 V C 4pF F R D Tested with 50 mA pulses, Voltage rise when switching ON t = 0.1 s, rise time < 30 ns, V 2.5 V p fr f = (5 to 100) kHz p I = 10 mA, i = 1 mA, V = 6 V, F R R Reverse recovery time t 4ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 3 10 500 450 2 10 400 T = 100 C T = 25 C j j 350 10 300 250 200 1 150 -1 100 10 50 -2 10 0 0 50 100 150 0 1 2 T - Ambient Temperature (C) 20809 amb 17437 V (V) F Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 4 10 T = 25 C T = 25 C j 5 j 1.1 f = 1 MHz f = 1 kHz 2 3 10 1.0 5 2 0.9 2 10 5 2 0.8 10 5 0.7 2 -2 -1 2 082416 0 10 1011100 V (V) 17440 R 17438 I (mA) F Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.8, 23-Feb-18 Document Number: 85748 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R () I (mA) F f C (V ) D R P - Power Dissipation (mW) tot C (0 V) D