Product Information

1N4148WS-HG3-08

1N4148WS-HG3-08 electronic component of Vishay

Datasheet
Diodes - General Purpose, Power, Switching 1V Vf, 4pF; 25nA Ir SOD-323
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3404 ea
Line Total: USD 0.34

121543 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2686 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5
5 : USD 0.0991
50 : USD 0.0807
150 : USD 0.0717
500 : USD 0.0648
3000 : USD 0.0521
6000 : USD 0.0493

121543 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.3404
10 : USD 0.2392
100 : USD 0.0978
1000 : USD 0.069
2500 : USD 0.0495
15000 : USD 0.0437
45000 : USD 0.0425
90000 : USD 0.0403

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

1N4148WS-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diodes AEC-Q101 qualified available Base P/N-HG3 - green, AEC-Q101 qualfied Base P/N-G3 - green, commercial grade Material categorization: for definitions of compliance please see MARKING (example only) www.vishay.com/doc 99912 MECHANICAL DATA X Y Case: SOD-323 22610 Weight: approx. 4 mg Bar = cathode marking Packaging codes / options: XY = type code 18/10K per 13 reel (8 mm tape), 10K/box DESIGN SUPPORT TOOLS click logo to get started 08/3K per 7 reel (8 mm tape), 15K/box Models Available PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS 1N4148WS-G 1N4148WS-G3-08 or 1N4148WS-G3-18 Single AH Tape and reel 1N4148WS-HG 1N4148WS-HG3-08 or 1N4148WS-HG3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 R V Repetitive peak reverse voltage V 100 RRM Average rectified current half wave rectification f 50 Hz I 150 F(AV) (1) with resistive load mA Surge forward current t < 1 s and T = 25 C I 350 j FSM (1) Power dissipation P 200 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.4, 31-Jan-18 Document Number: 85413 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 910001N4148WS-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 10 mA V 1V F F Forward voltage I = 100 mA V 1.2 V F F V = 20 V I 25 nA R R V = 75 V I 5 R R Leakage current V = 100 V I 100 A R R V = 20 V, T = 150 C I 50 R j R Diode capacitance V = V = 0 V C 4pF F R D Tested with 50 mA pulses, Voltage rise when switching ON t = 0.1 s, rise time < 30 ns, V 2.5 V p fr f = (5 to 100) kHz p I = 10 mA, i = 1 mA, V = 6 V, F R R Reverse recovery time t 4ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 3 250 10 200 2 10 T = 100 C T = 25 C j j 150 10 100 1 -1 50 10 -2 0 10 0 50 100 150 200 0 1 2 20324 T - Ambient Temperature (C) 17437 V (V) amb F Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 4 10 T = 25 C T = 25 C 5 j j 1.1 f = 1 kHz f = 1 MHz 2 3 10 1.0 5 2 2 0.9 10 5 2 0.8 10 5 0.7 2 -2 -1 2 082416 0 10 1011100 I (mA) 17440 V (V) 17438 F R Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.4, 31-Jan-18 Document Number: 85413 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I (mA) R () F f C (V ) P - Power Dissipation (mW) D R tot C (0 V) D

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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