IRL520, SiHL520
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
V (V) 100
DS
Available
Repetitive Avalanche Rated
R ()V = 5.0 V 0.27
DS(on) GS
RoHS*
Logic-Level Gate Drive
COMPLIANT
Q (Max.) (nC) 12
g
R Specified at V = 4 V and 5 V
DS(on) GS
Q (nC) 3.0
gs
175 C Operating Temperature
Q (nC) 7.1
gd
Fast Switching
Configuration Single
Ease of Paralleling
D
Compliant to RoHS Directive 2002/95/EC
TO-220AB
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G
ruggedized device design, low on-resistance and
cost-effectiveness.
S
The TO-220AB package is universally preferred for all
D
S
G
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
N-Channel MOSFET
and low package cost the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
IRL520PbF
Lead (Pb)-free
SiHL520-E3
IRL520
SnPb
SiHL520
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V 100
DS
V
Gate-Source Voltage V 10
GS
T = 25 C 9.2
C
Continuous Drain Current V at 5.0 V I
GS D
T = 100 C 6.5 A
C
a
Pulsed Drain Current I 36
DM
Linear Derating Factor 0.40 W/C
b
Single Pulse Avalanche Energy E 170 mJ
AS
a
Avalanche Current I 9.2 A
AR
a
Repetitive Avalanche Energy E 6.0 mJ
AR
Maximum Power Dissipation T = 25 C P 60 W
C D
c
Peak Diode Recovery dV/dt dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range T , T - 55 to + 175
J stg
C
d
Soldering Recommendations (Peak Temperature) for 10 s 300
10 lbf in
Mounting Torque 6-32 or M3 screw
1.1 N m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V = 25 V, starting T = 25 C, L = 3.0 mH, R = 25 , I = 9.2 A (see fig. 12).
DD J g AS
c. I 9.2 A, dI/dt 110 A/s, V V , T 175 C.
SD DD DS J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91298 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRL520, SiHL520
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R -62
thJA
Case-to-Sink, Flat, Greasd Surface R 0.50 - C/W
thCS
Maximum Junction-to-Case (Drain) R -2.5
thJC
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V
DS GS D
V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C
DS DS J D
Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V
GS(th) DS GS D
Gate-Source Leakage I V = 10 V - - 100 nA
GSS GS
V = 100 V, V = 0 V - - 25
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = 80 V, V = 0 V, T = 150 C - - 250
DS GS J
b
V = 5.0 V I = 5.5 A - - 0.27
GS D
Drain-Source On-State Resistance R
DS(on)
b
V = 4.0 V I = 4.6 A - - 0.38
GS D
Forward Transconductance g V = 50 V, I = 5.5 A 3.2 - - S
fs DS D
Dynamic
Input Capacitance C - 490 -
iss
V = 0 V,
GS
Output Capacitance C -V = 25 V, 150- pF
oss DS
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance C -30-
rss
Total Gate Charge Q --
g 12
= 9.2 A, V = 80 V,
I
D DS
Gate-Source Charge Q --V = 5.0 V nC
gs GS 3.0
b
see fig. 6 and 13
Gate-Drain Charge Q --
7.1
gd
Turn-On Delay Time t -9.8 -
d(on)
Rise Time t -64 -
r
V = 50 V, I = 9.2 A,
DD D
ns
b
Turn-Off Delay Time t -2R = 9.0 , R = 5.2 , see fig. 101-
d(off) g D
Fall Time t -27-
f
D
Between lead,
Internal Drain Inductance L -4.5 -
D
6 mm (0.25") from
nH
package and center of G
Internal Source Inductance L -7.5 -
S
die contact
S
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- 9.2
S
showing the
A
G
integral reverse
a
Pulsed Diode Forward Current I -- 36
SM
p - n junction diode S
b
Body Diode Voltage V T = 25 C, I = 9.2 A, V = 0 V -- 2.5 V
SD J S GS
Body Diode Reverse Recovery Time t - 130 190 ns
rr
b
T = 25 C, I = 9.2 A, dI/dt = 100 A/s
J F
Body Diode Reverse Recovery Charge Q - 0.83 1.0 C
rr
Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
Forward Turn-On Time t
on S D
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com Document Number: 91298
2 S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000