DMN13M9UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm I S Max Height = 0.21mm for Low Profile BVSSS RSS(ON) Typ T = +25C A ESD Protection of Gate 12V 23.6A 2.5m VGS = 3.8V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and Description manufactured in IATF 16949 certified facilities), please This new generation MOSFET is designed to minimize the on-state contact us or your local Diodes representative. resistance (RSS(ON)) and yet maintain superior switching performance, DMN13M9UCA6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Source-Source Voltage V 12 V SSS Gate-Source Voltage V 8 V GSS Steady T = +25C 23.6 A Continuous Source Current (Note 5) V = 4.5V I A GS S State 18.9 TA = +70C Steady TA = +25C 16.8 A Continuous Source Current (Note 5) VGS = 2.5V IS State 13.4 T = +70C A Pulsed Source Current (Note 6) I 100 A SM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) P 1.05 W D Thermal Resistance, Junction to Ambient T = +25C (Note 7) R 120.7 C/W A JA Power Dissipation (Note 5) 2.67 W PD 46.8 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Source-Source Breakdown Voltage 12 V BVSSS VGS = 0V, IS = 1mA 1 A Zero Gate Voltage Source Current TJ = +25C ISSS VSS = 10V, VGS = 0V Gate-Source Leakage I 10 A V = 8V, V =0V GSS GS SS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.3 V VSS = 6V, IS = 1mA VGS(TH) 1.2 2.3 3.2 V = 4.5V, I = 5A GS S 1.2 2.4 3.2 VGS = 4.0V, IS = 5A Static Source-Source On-Resistance 1.3 2.5 3.4 m RSS(ON) VGS = 3.8V, IS = 5A 1.3 2.7 4.6 VGS = 3.1V, IS = 5A 1.4 3.0 6.5 VGS = 2.5V, IS = 5A Diode Forward Voltage 0.7 1.2 V VSS VGS = 0V, IS = 3A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 3315 Ciss VSS = 6V, VGS = 0V, Output Capacitance C 850 pF oss f = 1.0MHz Reverse Transfer Capacitance C 248 rss Total Gate Charge Q 56.5 g Gate-Source Charge Q 8.8 gs VSS = 6V, VGS = 4.5V, nC Gate-Drain Charge Q 13.3 I = 27A gd S 6.9 Gate Charge at VTH Qg(TH) Turn-On Delay Time 603 tD(ON) Turn-On Rise Time 1694 tR V = 6V, V = 4.5V, SS GS ns Turn-Off Delay Time 4749 tD(OFF) IS = 3A Turn-Off Fall Time 6208 tF 2 2 Notes: 5. Device mounted on FR-4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN13M9UCA6 December 2019 Diodes Incorporated www.diodes.com Document number: DS39738 Rev. 4 - 2