X-On Electronics has gained recognition as a prominent supplier of IRLL110TRPBF-BE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. IRLL110TRPBF-BE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRLL110TRPBF-BE3 Vishay

IRLL110TRPBF-BE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.IRLL110TRPBF-BE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 100V N-CH
Datasheet: IRLL110TRPBF-BE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7291 ea
Line Total: USD 0.73

Availability - 107409
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1839 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 1.132
10 : USD 0.9464
100 : USD 0.9379
500 : USD 0.8856
1000 : USD 0.8775
5000 : USD 0.8694

107409 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 0.7291
10 : USD 0.644
100 : USD 0.5946

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
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We are delighted to provide the IRLL110TRPBF-BE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLL110TRPBF-BE3 and other electronic components in the MOSFET category and beyond.

IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount Available in tape and reel Dynamic dV/dt rating SOT-223 Repetitive avalanche rated G D Logic-level gate drive Available R specified at V = 4 V and 5 V DS(on) GS S Fast switching D G Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the Marking code: LB designer with the best combination of fast switching, ruggedized device design, low on-resistance and PRODUCT SUMMARY cost-effectiveness. The SOT-223 package is designed for surface-mounting V (V) 100 DS using vapor phase, infrared, or wave soldering techniques. R ( )V = 5.0 V 0.54 DS(on) GS Its unique package design allows for easy automatic Q (Max.) (nC) 6.1 pick-and-place as with other SOT or SOIC packages bu t g has the added advantage of improved thermal performance Q (nC) 2.6 gs due to an enlarged tab for heatsinking. Power dissipation of Q (nC) 3.3 gd greater than 1.25 W is possible in a typical surface moun t application. Configuration Single ORDERING INFORMATION Package SOT-223 SiHLL110TR-GE3 Lead (Pb)-free and halogen-free a, b IRLL110TRPbF-BE3 a Lead (Pb)-free IRLL110TRPbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 10 GS T = 25 C 1.5 C Continuous drain current V at 5 V I GS D T = 100 C 0.93 A C a Pulsed drain current I 12 DM Linear derating factor 0.025 W/C e Linear derating factor (PCB mount) 0.017 b Single pulse avalanche energy E 50 mJ AS a Avalanche current I 1.5 A AR a Repetitive avalanche energy E 0.31 mJ AR Maximum power dissipation T = 25 C 3.1 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.0 A c Peak diode recovery dv/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 25 mH, R = 25 , I = 1.5 A (see fig. 12) DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0322-Rev. G, 05-Apr-2021 Document Number: 91320 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLL110, SiHLL110 www.vishay.com Vishay Siliconix e. When mounted on 1 square PCB (FR-4 or G-10 material) THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -60 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -40 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 0.90 A - - 0.54 GS D Drain-source on-state resistance R DS(on) V = 4.0 V I = 0.75 A - - 0.76 GS D Forward transconductance g V = 25 V, I = 0.90 A 0.57 - - S fs DS D Dynamic Input capacitance C - 250 - iss V = 0 V, GS Output capacitance C -8V = 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 6.1 g I = 5.6 A, V = 80 V, D DS Gate-source charge Q --V = 5.0 V 2.6 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --3.3 gd Turn-on delay time t -9.3 - d(on) Rise time t -47 - r V = 50 V, I = 5.6 A, DD D ns R = 12 , R = 8.4 g D Turn-off delay time t -16- d(off) Fall time t -18- f D Between lead, Internal drain inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 1.5 S showing the A integral reverse G a Pulsed diode forward current I -- 12 p - n junction diode SM S b Body diode voltage V T = 25 C, I = 1.5 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 110 130 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.50 0.65 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S21-0322-Rev. G, 05-Apr-2021 Document Number: 91320 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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