SI1012CR-T1-GE3 Vishay

SI1012CR-T1-GE3 electronic component of Vishay
SI1012CR-T1-GE3 Vishay
SI1012CR-T1-GE3 MOSFETs
SI1012CR-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI1012CR-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1012CR-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI1012CR-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: null 630mA 396mO@600mA,4.5V 240mW null SC-75A MOSFETs ROHS
An industrial-grade bidirectional optocoupler for isolation and transfer applications.
Datasheet: SI1012CR-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.2062 ea
Line Total: USD 1.03 
Availability : 2905
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
5$ 0.2062
50$ 0.1638
150$ 0.1071
500$ 0.0857
3000$ 0.0771
6000$ 0.0729

Availability 32010
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1079
9000$ 0.1012
15000$ 0.1001
45000$ 0.0976
75000$ 0.0955


Availability 2905
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2062
50$ 0.1638
150$ 0.1071
500$ 0.0857
3000$ 0.0771
6000$ 0.0729


Availability 2288
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.308
10$ 0.2324
50$ 0.1778
100$ 0.1596
126$ 0.1512

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI1012CR-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1012CR-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI1012CR-T1-GE3 is a single-pole, normally closed (NC) miniature reed switch from Vishay. It is a type of electric switch that uses a reed to open and close an electrical circuit, driven by a magnetic field. The switch has a maximum contact current rating of 10 mA, a voltage drop of 0.7 V, and a maximum switching power of 1.1 W. The SI1012CR-T1-GE3 has an operating temperature range of -40 to 85°C. Its lead form is gull-wing and its lead length is 1.5 mm. Its mounting type is through-hole, and its body size measures 5.1 cm (2.5 mm) long x 1.8 cm (14.5 mm) wide x 1.3 cm (7.1 mm) high.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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