Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET: 1.8 V Rated V (V) R ( )I (mA) DS DS(on) D Gate-Source ESD Protected: 2000 V 0.70 at V = 4.5 V 600 GS High-Side Switching Low On-Resistance: 0.7 20 0.85 at V = 2.5 V 500 GS Low Threshold: 0.8 V (typ.) 1.25 at V = 1.8 V 350 GS Fast Switching Speed: 10 ns Material categorization: For definitions of compliance SC-75A or SC-89 please see www.vishay.com/doc 99912 G 1 APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, 3 D Memories Battery Operated Systems Power Supply Converter Circuits S 2 Load/Power Switching Cell Phones, Pagers Top View BENEFITS Ease in Driving Switches ORDERING INFORMATION Low Offset (Error) Voltage Marking Low-Voltage Operation Part Number Package Code High-Speed Circuits Si1012R-T1-GE3 (Lead (Pb)-free SC-75A Low Battery Voltage Operation C and Halogen-free) (SOT-416) Si1012X-T1-GE3 (Lead (Pb)-free SC-89 A and Halogen-free) (SOT-490) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 6 GS T = 25 C 600 500 A b I Continuous Drain Current (T = 150 C) D J T = 85 C 400 350 A mA a I Pulsed Drain Current 1000 DM b I 275 250 Continuous Source Current (Diode Conduction) S T = 25 C 175 150 A b Maximum Power Dissipation for SC-75 T = 85 C 90 80 A P mW D T = 25 C 275 250 A b Maximum Power Dissipation for SC-89 T = 85 C 160 140 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board. Document Number: 71166 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0786-Rev. E, 15-Apr-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1012R, Si1012X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.45 0.9V GS(th) DS GS D I V = 0 V, V = 4.5 V Gate-Body Leakage 0.5 1 A GSS DS GS V = 20 V, V = 0 V nA 0.3 100 DS GS I Zero Gate Voltage Drain Current DSS V = 20 V, V = 0 V, T = 85 C 5A DS GS J a I V = 5 V, V = 4.5 V 700 mA On-State Drain Current D(on) DS GS V = 4.5 V, I = 600 mA 0.41 0.70 GS D a R V = 2.5 V, I = 500 mA 0.53 0.85 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 350 mA 0.70 1.25 GS D a g V = 10 V, I = 400 mA Forward Transconductance 1 S fs DS D a V I = 150 mA, V = 0 V Diode Forward Voltage 0.8 1.2 V SD S GS b Dynamic Q Total Gate Charge 750 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 250 mA 75 pC gs DS GS D Q Gate-Drain Charge 225 gd Turn-On Delay Time t 5 d(on) t Rise Time V = 10 V, R = 47 5 r DD L ns I 200 mA, V = 4.5 V, R = 10 Turn-Off Delay Time t 25 D GEN g d(off) t Fall Time 11 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 71166 2 S13-0786-Rev. E, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000