Si1022R Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )V (V) I (mA) DS(min.) DS(on) GS(th) D Definition 1.25 at V = 10 V 60 1 to 2.5 330 GS TrenchFET Power MOSFETs Low On-Resistance: 1.25 Low Threshold: 2.5 V Low Input Capacitance: 30 pF Fast Switching Speed: 25 ns Low Input and Output Leakage SC-75A Miniature Package (SOT-416) ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC G 1 APPLICATIONS 3 D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. S 2 Battery Operated Systems Marking Code: E Solid State Relays Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free) BENEFITS Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 60 DS V V Gate-Source Voltage 20 GS T = 25 C 330 A a I Continuous Drain Current D T = 85 C 240 mA A a I 650 Pulsed Drain Current DM T = 25 C 250 A a P mW Power Dissipation D T = 85 C 130 A a R 500 C/W Thermal Resistance, Maximum Junction-to-Ambient thJA T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Notes: a. Surface mounted on FR4 board, power applied for t 10 s. Document Number: 71331 www.vishay.com S10-2687-Rev. F, 22-Nov-10 1Si1022R Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 60 DS GS D V V V = V , I = 0.25 mA Gate-Threshold Voltage 12.5 GS(th) DS GS D V = 0 V, V = 10 V 150 DS GS I T = 85 C Gate-Body Leakage 500 GSS J V = 0 V, V = 5 V 20 nA DS GS V = 50 V, V = 0 V 10 DS GS I T = 85 C Zero Gate Voltage Drain Current 100 DSS J V = 60 V, V = 0 V 1A DS GS V = 10 V, V = 4.5 V 500 DS GS a I mA On-State Drain Current D(on) V = 7.5 V, V = 10 V 800 DS GS V = 4.5 V, I = 200 mA 3.0 GS D T = 125 C 5.0 J a R Drain-Source On-State Resistance DS(on) V = 10 V, I = 500 mA 1.25 GS D T = 125 C 2.25 J a g V = 10 V, I = 200 mA 100 mS Forward Transconductance fs DS D a V V = 0 V, I = 200 mA 1.3 V Diode Forward Voltage SD GS S b Dynamic C Input Capacitance 30 iss C V = 25 V, V = 0 V, f = 1 MHz Output Capacitance 6 pF oss DS GS C Reverse Transfer Capacitance 2.5 rss nC Gate Charge Q V = 10 V, I = 250 mA, V = 4.5 V 0.6 g DS D GS b, c Switching t Turn-On Time V = 30 V, R = 150 , 25 (on) DD L ns I = 200 mA, V = 10 V, R = 10 t Turn-Off Time D GEN g 35 (off) Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71331 2 S10-2687-Rev. F, 22-Nov-10