Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (mA) DS DS(on) D Definition 5 at V = 4.5 V 200 GS TrenchFET Power MOSFET: 1.5 V Rated 7 at V = 2.5 V 175 Very Small Footprint GS N-Channel 20 High-Side Switching 9 at V = 1.8 V 150 GS Low On-Resistance: 10 at V = 1.5 V 50 GS N-Channel, 5 8 at V = - 4.5 V - 150 GS P-Channel, 8 12 at V = - 2.5 V - 125 Low Threshold: 0.9 V (typ.) GS P-Channel - 20 Fast Switching Speed: 45 ns (typ.) 15 at V = - 1.8 V - 100 GS 1.5 V Operation 20 at V = - 1.5 V - 30 GS Gate-Source ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC BENEFITS SC-89 Ease in Driving Switches S 1 1 6 D 1 Low Offset (Error) Voltage Low-Voltage Operation 2 5 G G 1 2 High-Speed Circuits Marking Code: M Low Battery Voltage Operation D 3 4 S 2 2 APPLICATIONS Top View Replace Digital Transistor, Level-Shifter Battery Operated Systems Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free) Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit V Drain-Source Voltage 20 - 20 DS V V Gate-Source Voltage 5 GS T = 25 C 190 180 - 155 - 145 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 140 130 - 110 - 105 A mA b I 650 - 650 Pulsed Drain Current DM Continuous Source Current (Diode Conduction) I 450 380 - 450 - 380 S T = 25 C 280 250 280 250 A a P mW Maximum Power Dissipation D T = 85 C 145 130 145 130 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71426 www.vishay.com S10-2544-Rev. C, 08-Nov-10 1Si1035X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 250 A N-Ch 0.40 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 0.40 DS GS D N-Ch 0.5 1.0 V = 0 V, V = 2.8 V DS GS P-Ch 0.5 1.0 I Gate-Body Leakage A GSS N-Ch 1.5 3.0 V = 0 V, V = 4.5 V DS GS P-Ch 1.0 3.0 V = 16 V, V = 0 V N-Ch 1 500 DS GS nA V = - 16 V, V = 0 V P-Ch - 1 - 500 DS GS I Zero Gate Voltage Drain Current DSS V = 16 V, V = 0 V, T = 85 C N-Ch 10 DS GS J A V = - 16 V, V = 0 V, T = 85 C P-Ch - 10 DS GS J V = 5 V, V = 4.5 V N-Ch 250 DS GS a I mA On-State Drain Current D(on) V = - 5 V, V = - 4.5 V P-Ch - 200 DS GS V = 4.5 V, I = 200 mA N-Ch 5 GS D V = - 4.5 V, I = - 150 mA P-Ch 8 GS D V = 2.5 V, I = 175 mA N-Ch 7 GS D V = - 2.5 V, I = 125 mA P-Ch 12 Drain-Source On-State GS D R DS(on) a Resistance V = 1.8 V, I = 150 mA N-Ch 9 GS D V = - 1.8 V, I = - 100 mA P-Ch 15 GS D V = 1.5 V, I = 40 mA N-Ch 10 DS D V = - 1.5 V, I = - 30 mA P-Ch 20 DS D V = 10 V, I = 200 mA N-Ch 0.5 DS D a g S Forward Transconductance fs V = - 10 V, I = - 150 mA P-Ch 0.4 DS D I = 150 mA, V = 0 V N-Ch 1.2 S GS a V V Diode Forward Voltage SD I = - 150 mA, V = 0 V P-Ch - 1.2 S GS b Dynamic N-Ch 750 Q Total Gate Charge g N-Channel P-Ch 1500 V = 10 V, V = 4.5 V, I = 150 mA DS GS D N-Ch 75 Q Gate-Source Charge pC gs P-Ch 150 P-Channel N-Ch 225 V = - 10 V, V = - 4.5 V, I = - 150 mA DS GS D Q Gate-Drain Charge gd P-Ch 450 N-Channel N-Ch 75 V = 10 V, R = 47 t Turn-On Time DD L ON I 250 mA, V = 4.5 V, R = 10 P-Ch 80 D GEN g ns P-Channel N-Ch 75 V = - 10 V, R = 65 Turn-Off Time t DD L OFF I - 150 mA, V = - 4.5 V, R = 10 P-Ch 90 D GEN g Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71426 2 S10-2544-Rev. C, 08-Nov-10