SI1303DL-T1-E3 Vishay

SI1303DL-T1-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SI1303DL-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1303DL-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI1303DL-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 20V 0.72A Small-signal MOSFET transistor optimized for high-speed switching.
Datasheet:	SI1303DL-T1-E3 Datasheet (PDF)

Price (USD)

3000: USD 0.1439 ea
Line Total: USD 431.7

Availability : 0

Qty	Unit Price
3000	$ 0.1439

SI1303DL-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 08 Aug to Thu. 14 Aug

MOQ : 3000
Multiples : 1

Qty	Unit Price
3000	$ 0.1439

We are delighted to provide the SI1303DL-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1303DL-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

SI1303DL-T1-E3 is part of Vishay's Siliconix OptoMOS product line. It is a dual N-channel power MOSFET in a low profile 3x2mm DPAK surface mount package. The N-channel MOSFET features a VDS (Drain-Source Voltage) of 30V with a maximum current rating of 2.6A and an RDS (on) of 0.12O. The MOSFET has very low gate charge (Qg) and is ideal for low duty cycle high frequency DC-DC converters and other high frequency switching circuits.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 670 mA 670 mA
Vds - Drain-Source Breakdown Voltage - 20 V - 20 V
Rds On - Drain-Source Resistance 560 mOhms 560 mOhms
Transistor Polarity P - Channel P - Channel
Vgs - Gate-Source Breakdown Voltage 12 V 12 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 290 mW 290 mW
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 323 - 3 SOT - 323 - 3
Packaging Reel Reel
Channel Mode Enhancement Enhancement
Tradename Trenchfet Trenchfet
Configuration Single Single
Brand Vishay / Siliconix Vishay / Siliconix
Forward Transconductance - Min 1.7 S 1.7 S
Fall Time 14 ns 14 ns
Rise Time 31 ns 31 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 12.5 ns 12.5 ns