X-On Electronics has gained recognition as a prominent supplier of SI1317DL-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI1317DL-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI1317DL-T1-GE3

SI1317DL-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI1317DL-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 20V 1.4A P-Channel
Datasheet: SI1317DL-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4278 ea
Line Total: USD 0.43

Availability - 111671
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.116
9000 : USD 0.116
12000 : USD 0.116
30000 : USD 0.116
45000 : USD 0.116

111671 - WHS 2


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4278
10 : USD 0.3312
100 : USD 0.1863
1000 : USD 0.1345
3000 : USD 0.1208
9000 : USD 0.1127
24000 : USD 0.1127

2910 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1306
9000 : USD 0.1297

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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New Product Si1317DL Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 c V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.150 at V = - 4.5 V - 1.4 GS TrenchFET Power MOSFET - 20 0.192 at V = - 2.5 V - 1.3 4.3 nC GS 100 % R Tested g 0.270 at V = - 1.8 V - 1.1 Compliant to RoHS Directive 2002/95/EC GS APPLICATIONS Load Switch DC/DC Converters SOT-323 SC-70 (3-LEADS) G 1 S 3 D G S 2 Top View Si1317DL (LK)* D * Marking Code Ordering Information: Si1317DL-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 1.4 C T = 70 C - 1.1 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 1.4 A a, b T = 70 C - 1.1 A A I - 6 Pulsed Drain Current DM T = 25 C - 0.4 C I Continuous Source-Drain Diode Current S T = 25 C - 0.3 A T = 25 C 0.5 C T = 70 C 0.3 C Maximum Power Dissipation P W D a, b T = 25 C 0.4 A a, b T = 70 C 0.3 A Operating Junction and Storage Temperature Range T , T - 50 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Based on T = 25 C. C Document Number: 67194 www.vishay.com S10-2764-Rev. A, 29-Nov-10 1New Product Si1317DL Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b Maximum Junction-to-Ambient t 10 s R 250 300 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 225 270 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 360 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A mV/C D V /T 2.4 V Temperature Coefficient GS(th) J GS(th) Gate-Source Threshold Voltage V - 0.45 - 0.8 V V = V , I = - 250 A GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I - 5 V, V = - 4.5 V - 2 A V D(on) DS GS 0.125 0.150 V = - 4.5 V, I = - 1.4 A GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 1.2 A 0.160 0.192 DS(on) GS D V = - 1.8 V, I = - 0.3 A 0.180 0.270 GS D a Forward Transconductance g V = - 5 V, I = - 1.4 A 5S fs DS D b Dynamic Input Capacitance C 272 iss Output Capacitance C 55V = - 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 44 rss V = - 10 V, V = - 4.5 V, I = - 1.4 A 4.3 6.5 DS GS D Total Gate Charge Q g 2.7 4.1 nC Gate-Source Charge Q V = - 10 V, V = - 2.5 V, I = - 1.4 A 0.7 gs DS GS D Gate-Drain Charge Q 1.0 gd Gate Resistance R f = 1 MHz 1.4 7 14 g Turn-On Delay Time t 12 20 d(on) Rise Time t 20 30 V = - 10 V, R = 9.1 r DD L I - 1.1 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 2335 D GEN g d(off) Fall Time t 918 f ns Turn-On Delay Time t 510 d(on) Rise Time t 10 20 V = - 10 V, R = 9.1 r DD L I - 1.1 A, V = - 8 V, R = 1 Turn-Off DelayTime t 1827 D GEN g d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 0.4 S C A a Pulse Diode Forward Current I - 6 SM Body Diode Voltage V I = - 0.7 A - 0.8 - 1.2 V SD F Body Diode Reverse Recovery Time t 18 27 ns rr Body Diode Reverse Recovery Charge Q 714 nC rr I = - 0.7 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 7 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67194 2 S10-2764-Rev. A, 29-Nov-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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