SI1026X-T1-GE3 Vishay

SI1026X-T1-GE3 electronic component of Vishay
SI1026X-T1-GE3 Vishay
SI1026X-T1-GE3 MOSFETs
SI1026X-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI1026X-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1026X-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI1026X-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds 20V Vgs SC89-6
Datasheet: SI1026X-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.3368 ea
Line Total: USD 1.68 
Availability : 4786
  
Ship by Fri. 15 Aug to Wed. 20 Aug
QtyUnit Price
5$ 0.3368
50$ 0.2918
150$ 0.184
500$ 0.1678
3000$ 0.1605
6000$ 0.1563

Availability 4786
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3368
50$ 0.2918
150$ 0.184
500$ 0.1678
3000$ 0.1605
6000$ 0.1563

   
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We are delighted to provide the SI1026X-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1026X-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI1026X-T1-GE3 with MOSFET 60V Vds 20V Vgs SC89-6 is a Vishay-manufactured N-channel MOSFET, which is designed for digital switching applications. This MOSFET features a maximum drain-source voltage (Vds) of 60V and a maximum gate-source voltage (Vgs) of 20V. It offers superior power efficiency and switching performance due to its low on-resistance and low gate charge. It is available in a tiny SC89-6 surface mount package for easy assembly.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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