X-On Electronics has gained recognition as a prominent supplier of SI1902DL-T1-BE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1902DL-T1-BE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1902DL-T1-BE3 Vishay

SI1902DL-T1-BE3 electronic component of Vishay
SI1902DL-T1-BE3 Vishay
SI1902DL-T1-BE3 MOSFETs
SI1902DL-T1-BE3  Semiconductors

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See Product Specifications
Part No. SI1902DL-T1-BE3
Manufacturer: Vishay
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 20V 660mA (Ta) 270mW (Ta) Surface Mount SC-70-6
Datasheet: SI1902DL-T1-BE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6125 ea
Line Total: USD 0.61 
Availability - 36972
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
36972
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6125
10 : USD 0.4425
100 : USD 0.299
250 : USD 0.2794
500 : USD 0.2321
1000 : USD 0.1947
3000 : USD 0.1793
6000 : USD 0.1694
9000 : USD 0.1639

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
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We are delighted to provide the SI1902DL-T1-BE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1902DL-T1-BE3 and other electronic components in the MOSFETs category and beyond.

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Si1902DL Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Definition TrenchFET Power MOSFETs: 2.5 V Rated 0.385 at V = 4.5 V 0.70 GS 20 100 % R Tested g 0.630 at V = 2.5 V 0.54 GS Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) S D 1 6 M arkin g C ode 1 1 Marking Code PAPA XX 5 G 2 G 1 2 Lot TLot Traceability and Date Code Part Code D 3 4 S 2 2 Top View Ordering Information: Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel) Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 20 DS V V Gate-Source Voltage 12 GS T = 25 C 0.70 0.66 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 0.50 0.48 A A I 1 Pulsed Drain Current DM a I 0.25 0.23 Continuous Source Current (Diode Conduction) S T = 25 C 0.30 0.27 A a P W Maximum Power Dissipation D T = 85 C 0.16 0.14 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 360 415 a R Maximum Junction-to-Ambient thJA Steady State 400 460 C/W R Maximum Junction-to-Foot (Drain) Steady State 300 350 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71080 www.vishay.com S11-2043-Rev. J, 17-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YY YYYSi1902DL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100nA GSS DS GS V = 16 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 16 V = 0 V, T = 85C 5 DS GS J a I V 5 V, V = 4.5 V 1 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 0.66 A 0.320 0.385 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 0.40 A 0.560 0.630 GS D a g V = 10 V, I = 0.66 A 1.5 S Forward Transconductance fs DS D a V I = 0.23 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 0.8 1.2 g Q V = 10 V, V = 4.5 V, I = 0.66 A Gate-Source Charge 0.06 nC gs DS GS D Gate-Drain Charge Q 0.30 gd Gate Resistance R f = 1 MHz 0.2 1 1.7 g Turn-On Delay Time t 10 20 d(on) t Rise Time V = 10 V, R = 20 16 30 r DD L I 0.5 A, V = 4.5 V, R = 6 Turn-Off DelayTime t 10 20 ns D GEN g d(off) t Fall Time 10 20 f Source-Drain Reverse Recovery Time t I = 0.23 A, dI/dt = 100 A/s 20 40 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1.0 1.0 V = 5 V thru 2.5 V GS 0.8 0.8 2 V 0.6 0.6 0.4 0.4 T = 125 C C 0.2 0.2 1.5 V 25 C - 55 C 1 V 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71080 2 S11-2043-Rev. J, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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