X-On Electronics has gained recognition as a prominent supplier of SI2308CDS-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI2308CDS-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI2308CDS-T1-GE3 Vishay

SI2308CDS-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI2308CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: MOSFET 60V Vds 20V Vgs SOT-23
Datasheet: SI2308CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3272 ea
Line Total: USD 1.64

Availability - 3264
Ships to you between
Mon. 01 Jul to Thu. 04 Jul
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 6000
Multiples : 1
6000 : USD 0.1219
9000 : USD 0.1105
24000 : USD 0.1095
30000 : USD 0.1091
45000 : USD 0.1079
75000 : USD 0.1028

0 - WHS 2


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 5
Multiples : 1
5 : USD 0.5239
10 : USD 0.3997
100 : USD 0.256
500 : USD 0.1969
1000 : USD 0.1377
5000 : USD 0.117

0 - WHS 3


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1102

0 - WHS 4


Ships to you between
Mon. 01 Jul to Thu. 04 Jul

MOQ : 5
Multiples : 5
5 : USD 0.3385
50 : USD 0.2708
150 : USD 0.2418
500 : USD 0.2056
3000 : USD 0.1895
6000 : USD 0.1798

0 - WHS 5


Ships to you between Fri. 28 Jun to Tue. 02 Jul

MOQ : 1
Multiples : 1
1 : USD 1.0952
10 : USD 0.7639
100 : USD 0.2361
500 : USD 0.1795
1000 : USD 0.1346
3000 : USD 0.1111
9000 : USD 0.1069
24000 : USD 0.1047

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI2308CDS-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2308CDS-T1-GE3 and other electronic components in the MOSFET category and beyond.

The SI2308CDS-T1-GE3 is a small-signal MOSFET device in a SOT-23 package manufactured by Vishay. It has a maximum Vds (drain-source voltage) of 60V and a maximum Vgs (gate-source voltage) of 20V. It features low on-resistance, low gate charge, and a larger Cree drift region than comparable devices. Its fast switching characteristics offer excellent switching speed and efficiency, making it suitable for high-frequency, switching, and amplifier applications in consumer, computing, and telecommunication systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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