X-On Electronics has gained recognition as a prominent supplier of SI2312BDS-T1-E3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI2312BDS-T1-E3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI2312BDS-T1-E3 Vishay

SI2312BDS-T1-E3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI2312BDS-T1-E3
Manufacturer: Vishay
Category:MOSFET
Description: N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2312BDS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1677 ea
Line Total: USD 503.1

Availability - 2910
Ships to you between
Wed. 05 Jun to Tue. 11 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000

SI2312BDS-T1-E3 More Buying Options & Price Grid(s)

Availability Price Quantity
11640 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2389
6000 : USD 0.211
12000 : USD 0.2062

2910 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1677
6000 : USD 0.1677
9000 : USD 0.1677
15000 : USD 0.1677
30000 : USD 0.1677

12818 - WHS 3


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7657
25 : USD 0.6565
50 : USD 0.5616
100 : USD 0.4641
250 : USD 0.4147

354 - WHS 4


Ships to you between
Wed. 12 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4821
10 : USD 0.3976
30 : USD 0.3622
100 : USD 0.3174
500 : USD 0.2669
1000 : USD 0.2561

261817 - WHS 5


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5348
10 : USD 0.4566
100 : USD 0.3255
500 : USD 0.2657
1000 : USD 0.222
3000 : USD 0.2196

11640 - WHS 6


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2389
6000 : USD 0.211
12000 : USD 0.2062

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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We are delighted to provide the SI2312BDS-T1-E3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2312BDS-T1-E3 and other electronic components in the MOSFET category and beyond.

Additional Infomation About Product

The SI2312BDS-T1-E3 is an N-Channel, 20 V, 3.9 A (Ta) 750 mW (Ta) surface mount SOT-23-3 (TO-236) transistor manufactured by Vishay. It is a very small, three-lead, surface mount, field-effect transistor suitable for high speed switching and amplifier applications. It is able to handle 3.9 amps while still being able to withstand 20 volts of current. A 750 mW (Ta) power dissipation rating allows it to be used for various applications due to its high thermal capacity. Sized at 3x2.9x1.1 mm, this tiny transistor is designed to allow for compact designs. Its exceptional performance and reliability ensure it is suitable for a wide range of applications including switching and amplifying applications, as well as radio frequency and microwave communication applications. The SI2312BDS-T1-E3 is a versatile and cost-effective solution for many projects.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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