SI2312BDS-T1-E3 Vishay

Name: SI2312BDS-T1-E3
Brand: Vishay
SKU: SI2312BDST1E3_Vishay
Availability: OutOfStock
Rating: 5 (11 reviews)

SI2312BDS-T1-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SI2312BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2312BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI2312BDS-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet:	SI2312BDS-T1-E3 Datasheet (PDF)

Price (USD)

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SI2312BDS-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.1762

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Obsolete

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.3273
10	$ 0.2995
25	$ 0.2979
100	$ 0.257
250	$ 0.2555
500	$ 0.2288
1000	$ 0.2094

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Obsolete

Availability 0

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.2573
6000	$ 0.2311
15000	$ 0.2151
30000	$ 0.204

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Availability 0

MOQ : 1
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Qty	Unit Price
1	$ 0.7269
10	$ 0.5978
100	$ 0.4463
500	$ 0.3506
1000	$ 0.271

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Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.7746
10	$ 0.6042
100	$ 0.4011
500	$ 0.3249
1000	$ 0.2579
3000	$ 0.2386
6000	$ 0.2249
9000	$ 0.217

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Availability 0

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.1625
6000	$ 0.1625
9000	$ 0.1625
15000	$ 0.1625
30000	$ 0.1625

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Availability 0

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.1697

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MOQ : 114
Multiples : 1

Qty	Unit Price
114	$ 0.6107
151	$ 0.4592
500	$ 0.3512
1000	$ 0.3129
3000	$ 0.2289
6000	$ 0.1918

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Availability 0

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.2073
6000	$ 0.1978
12000	$ 0.1867

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Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.7421
25	$ 0.6363
50	$ 0.5443
100	$ 0.4498
250	$ 0.4019

N/A

Obsolete

Availability 0

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.7269
10	$ 0.5978
100	$ 0.4463
500	$ 0.3506
1000	$ 0.271

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Obsolete

Availability 0

MOQ : 5
Multiples : 5

Qty	Unit Price
5	$ 0.6422
50	$ 0.3798
150	$ 0.3025
500	$ 0.2261
3000	$ 0.2044
6000	$ 0.1913

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Availability 0

MOQ : 44
Multiples : 1

Qty	Unit Price
44	$ 0.3217
100	$ 0.2694
250	$ 0.2679
500	$ 0.232
1000	$ 0.2116
3000	$ 0.2092

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Obsolete

Availability 0

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.2339
6000	$ 0.211
12000	$ 0.1951

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Obsolete

Availability 0

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.233
6000	$ 0.211
12000	$ 0.1923

N/A

Obsolete

We are delighted to provide the SI2312BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2312BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2312BDS-T1-E3 is an N-Channel, 20 V, 3.9 A (Ta) 750 mW (Ta) surface mount SOT-23-3 (TO-236) transistor manufactured by Vishay. It is a very small, three-lead, surface mount, field-effect transistor suitable for high speed switching and amplifier applications. It is able to handle 3.9 amps while still being able to withstand 20 volts of current. A 750 mW (Ta) power dissipation rating allows it to be used for various applications due to its high thermal capacity. Sized at 3x2.9x1.1 mm, this tiny transistor is designed to allow for compact designs. Its exceptional performance and reliability ensure it is suitable for a wide range of applications including switching and amplifying applications, as well as radio frequency and microwave communication applications. The SI2312BDS-T1-E3 is a versatile and cost-effective solution for many projects.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BC may also be referenced as

BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 5 A 5 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 31 mOhms 31 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 450 mV 450 mV
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.25 W 1.25 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 236 - 3 TO - 236 - 3
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 4.5 V 4.5 V
Qg - Gate Charge 12 nC 12 nC
Channel Mode Enhancement Enhancement
Tradename Trenchfet Trenchfet
Configuration Single Single
Brand Vishay / Siliconix Vishay / Siliconix
Continuous Drain Current 3.9 A 3.9 A
Drain-Source Breakdown Voltage 20 V 20 V
Gate-Source Breakdown Voltage +/- 8 V +/- 8 V
Power Dissipation 750 mW 750 mW
Rds On 31 Mohms 31 Mohms
Fall Time 30 ns 30 ns
Rise Time 30 ns 30 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 35 ns 35 ns
Height 1.45 mm 1.45 mm
Length 2.9 mm 2.9 mm
Series Si2 Si2
Transistor Type 1 N - Channel 1 N - Channel
Width 1.6 mm 1.6 mm
Forward Transconductance - Min 30 S 30 S
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412101 85412101

SI2312BDS-T1-E3 Vishay

SI2312BDS-T1-E3 More Buying Options & Price Grid(s)

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