SI2312BDS-T1-E3 Vishay

Name: SI2312BDS-T1-E3
Brand: Vishay
SKU: SI2312BDST1E3_Vishay
Availability: OutOfStock
Rating: 5 (11 reviews)

SI2312BDS-T1-E3 electronic component of Vishay

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2312BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2312BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI2312BDS-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet:	SI2312BDS-T1-E3 Datasheet (PDF)

Price (USD)

5: USD 0.6626 ea
Line Total: USD 3.31

Availability : 0

Qty	Unit Price
5	$ 0.6626
50	$ 0.3919
150	$ 0.3121
500	$ 0.2333
3000	$ 0.2109
6000	$ 0.1973

SI2312BDS-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.1818

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.3377
10	$ 0.309
25	$ 0.3074
100	$ 0.2651
250	$ 0.2636
500	$ 0.2361
1000	$ 0.2161

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.2655
6000	$ 0.2384
15000	$ 0.222
30000	$ 0.2105

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.75
10	$ 0.6168
100	$ 0.4605
500	$ 0.3617
1000	$ 0.2796

Availability 0

Ship by Tue. 23 Sep to Thu. 25 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.7992
10	$ 0.6233
100	$ 0.4138
500	$ 0.3352
1000	$ 0.266
3000	$ 0.2462
6000	$ 0.232
9000	$ 0.2239

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.1677
6000	$ 0.1677
9000	$ 0.1677
15000	$ 0.1677
30000	$ 0.1677

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.1751

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 114
Multiples : 1

Qty	Unit Price
114	$ 0.63
151	$ 0.4738
500	$ 0.3624
1000	$ 0.3228
3000	$ 0.2361
6000	$ 0.1979

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.2139
6000	$ 0.204
12000	$ 0.1926

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.7657
25	$ 0.6565
50	$ 0.5616
100	$ 0.4641
250	$ 0.4147

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 0.75
10	$ 0.6168
100	$ 0.4605
500	$ 0.3617
1000	$ 0.2796

Availability 0

Ship by Thu. 02 Oct to Tue. 07 Oct

MOQ : 5
Multiples : 5

Qty	Unit Price
5	$ 0.6626
50	$ 0.3919
150	$ 0.3121
500	$ 0.2333
3000	$ 0.2109
6000	$ 0.1973

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 44
Multiples : 1

Qty	Unit Price
44	$ 0.332
100	$ 0.2779
250	$ 0.2764
500	$ 0.2394
1000	$ 0.2183
3000	$ 0.2158

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.2413
6000	$ 0.2177
12000	$ 0.2013

Availability 0

Ship by Thu. 25 Sep to Wed. 01 Oct

MOQ : 3000
Multiples : 3000

Qty	Unit Price
3000	$ 0.2404
6000	$ 0.2177
12000	$ 0.1984

We are delighted to provide the SI2312BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2312BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2312BDS-T1-E3 is an N-Channel, 20 V, 3.9 A (Ta) 750 mW (Ta) surface mount SOT-23-3 (TO-236) transistor manufactured by Vishay. It is a very small, three-lead, surface mount, field-effect transistor suitable for high speed switching and amplifier applications. It is able to handle 3.9 amps while still being able to withstand 20 volts of current. A 750 mW (Ta) power dissipation rating allows it to be used for various applications due to its high thermal capacity. Sized at 3x2.9x1.1 mm, this tiny transistor is designed to allow for compact designs. Its exceptional performance and reliability ensure it is suitable for a wide range of applications including switching and amplifying applications, as well as radio frequency and microwave communication applications. The SI2312BDS-T1-E3 is a versatile and cost-effective solution for many projects.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BC may also be referenced as

BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
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Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
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Vishay/Beyschlag
Vishay/Dale
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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 5 A 5 A
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Rds On - Drain-Source Resistance 31 mOhms 31 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 450 mV 450 mV
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.25 W 1.25 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 236 - 3 TO - 236 - 3
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 4.5 V 4.5 V
Qg - Gate Charge 12 nC 12 nC
Channel Mode Enhancement Enhancement
Tradename Trenchfet Trenchfet
Configuration Single Single
Brand Vishay / Siliconix Vishay / Siliconix
Continuous Drain Current 3.9 A 3.9 A
Drain-Source Breakdown Voltage 20 V 20 V
Gate-Source Breakdown Voltage +/- 8 V +/- 8 V
Power Dissipation 750 mW 750 mW
Rds On 31 Mohms 31 Mohms
Fall Time 30 ns 30 ns
Rise Time 30 ns 30 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 35 ns 35 ns
Height 1.45 mm 1.45 mm
Length 2.9 mm 2.9 mm
Series Si2 Si2
Transistor Type 1 N - Channel 1 N - Channel
Width 1.6 mm 1.6 mm
Forward Transconductance - Min 30 S 30 S
Cnhts 8541210000 8541210000
Hts Code 8541290095 8541290095
Mxhts 85412101 85412101

SI2312BDS-T1-E3 Vishay

SI2312BDS-T1-E3 More Buying Options & Price Grid(s)

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