Si2333CDS-T1-GE3 Vishay

Si2333CDS-T1-GE3 electronic component of Vishay
Si2333CDS-T1-GE3 Vishay
Si2333CDS-T1-GE3 MOSFETs
Si2333CDS-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of Si2333CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si2333CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. Si2333CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: Si2333CDS-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.3662 ea
Line Total: USD 1.83 
Availability : 8123
  
Ship by Tue. 19 Aug to Fri. 22 Aug
QtyUnit Price
5$ 0.3662
50$ 0.2886
150$ 0.1915
500$ 0.1443
3000$ 0.1147
6000$ 0.1072

Availability 2231
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 334
Multiples : 1
QtyUnit Price
334$ 0.7789
450$ 0.5778
454$ 0.5739
614$ 0.4239
620$ 0.4198
757$ 0.3437
1000$ 0.3316


Availability 5820
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2028
6000$ 0.1925
9000$ 0.1913
12000$ 0.19
15000$ 0.1875


Availability 8123
Ship by Tue. 19 Aug to Fri. 22 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3662
50$ 0.2886
150$ 0.1915
500$ 0.1443
3000$ 0.1147
6000$ 0.1072


Availability 2231
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 454
Multiples : 1
QtyUnit Price
454$ 0.5739
614$ 0.4239
620$ 0.4198
757$ 0.3437
1000$ 0.3316


Availability 1611
Ship by Tue. 19 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.49
10$ 0.4236
30$ 0.396
100$ 0.27
500$ 0.2318
1000$ 0.2261


Availability 3026
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.008
10$ 0.7378
78$ 0.2422
213$ 0.2282


Availability 2910
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3013

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the Si2333CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si2333CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Si2333CDS-T1-GE3 is a P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236) manufactured by Vishay. It is a low-voltage, low-current, general-purpose MOSFET designed for use in low-noise switch-mode applications and power management solutions. It has a low input capacitance that allows for fast switching operations. It also features a low on-state resistance for improved efficiency, and its temperature-compensated threshold voltage helps maintain low gate-to-source voltage. The package allows it to be mounted directly to printed circuit boards and its lead form permits a low-profile solution.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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