X-On Electronics has gained recognition as a prominent supplier of SI2333CDS-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI2333CDS-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

Si2333CDS-T1-GE3 Vishay

Si2333CDS-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.Si2333CDS-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: Si2333CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2319 ea
Line Total: USD 1.16

Availability - 11174
Ships to you between
Thu. 13 Jun to Tue. 18 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
5820 - WHS 1


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1961

11174 - WHS 2


Ships to you between
Thu. 13 Jun to Tue. 18 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2319
50 : USD 0.1894
150 : USD 0.1712
500 : USD 0.1484
3000 : USD 0.1215
6000 : USD 0.1154

31659 - WHS 3


Ships to you between Wed. 12 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.583
10 : USD 0.5037
100 : USD 0.3657
500 : USD 0.2978
1000 : USD 0.2634

40740 - WHS 4


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2557
6000 : USD 0.2444
9000 : USD 0.2292
30000 : USD 0.2263

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2333CDS-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2333CDS-T1-GE3 and other electronic components in the MOSFET category and beyond.

The Si2333CDS-T1-GE3 is a P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236) manufactured by Vishay. It is a low-voltage, low-current, general-purpose MOSFET designed for use in low-noise switch-mode applications and power management solutions. It has a low input capacitance that allows for fast switching operations. It also features a low on-state resistance for improved efficiency, and its temperature-compensated threshold voltage helps maintain low gate-to-source voltage. The package allows it to be mounted directly to printed circuit boards and its lead form permits a low-profile solution.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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