Product Information

SI3588DV-T1-E3

SI3588DV-T1-E3 electronic component of Vishay

Datasheet
MOSFET 20V 3.02.2A
Silicon femtoMOS N-channel enhancement mode field-effect transistor for low-voltage applications.

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6552 ea
Line Total: USD 0.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 1.5498
10 : USD 1.323
100 : USD 1.066
250 : USD 0.9223
500 : USD 0.8014
1000 : USD 0.7515

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.6552
10 : USD 0.6493
125 : USD 0.5967
750 : USD 0.4855
1500 : USD 0.4563
2500 : USD 0.4504

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Tradename
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Siliconix The SI3588DV-T1-E3, designed by Vishay Siliconix, is a 3-channel, low-side MOSFET driver. It is a monolithic HVIC with a TTL- and CMOS-compatible input and configurable drive current up to 2.5A. It has a low RDS(on) of 70mO Typical and 1.2V logic thresholds. The SI3588DV-T1-E3 is optimized for driving brushed DC motors or 3-phase brushless DC motors, as well as general low-side MOSFETs and IGBTs. It is housed in an 8-pin SOIC-8 package and operates with a 6 to 18V power supply, allowing it to be used in a wide range of automotive, consumer, and industrial applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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