Product Information

SI3585DV-T1-E3

SI3585DV-T1-E3 electronic component of Vishay

Datasheet
MOSFET 20V 2.41.8A
The SI3585DV-T1-E3 is an isolated gate driver from Vishay.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.22 ea
Line Total: USD 660

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 1
3000 : USD 0.22

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Tradename
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

The Vishay SI3585DV-T1-E3 is a low-capacitance, Hot Swap Transil™ designed to protect high-speed communication interfaces from the damaging effects of overvoltage transient. The device is housed in the industry-standard SOT-23-5 small surface-mount package, making it ideal for applications such as USB, Ethernet and other communication interfaces. It features an operating voltage range of 4.5V to 15V and a low capacitance of 0.5pF. The device is rated for very fast response times of less than 15ns, and is capable of suppressing transients up to 60A peak. It also features low leakage, which allows for higher-current applications without adding additional power loss. The SI3585DV-T1-E3 is RoHS-compliant and halogen-free, making it a reliable and environmentally friendly choice for a wide range of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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