New Product Si4124DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Available TrenchFET Power MOSFET 0.0075 at V = 10 V 20.5 GS 40 21 nC 100 % R Tested g 0.009 at V = 4.5 V 18.7 GS APPLICATIONS Synchronous Rectification SO-8 DC/DC D S D 1 8 D S 2 7 D S 3 6 G D 4 5 G Top View S Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS T = 25 C 20.5 C T = 70 C 16.4 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C 13.6 A A a, b T = 70 C 10.9 A Pulsed Drain Current I 50 DM Avalanche Current I 33 AS L = 0.1 mH Avalanche Energy E 54 mJ AS T = 25 C 4.7 C Continuous Source-Drain Diode Current I A S a, b T = 25 C 2.1 A T = 25 C 5.7 C T = 70 C 3.6 C Maximum Power Dissipation P W D a, b T = 25 C 2.5 A a, b T = 70 C 1.6 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c Maximum Junction-to-Ambient t 10 s R 39 50 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 C/W. d. Based on T = 25 C. C Document Number: 68601 www.vishay.com S09-0392-Rev. B, 09-Mar-09 1New Product Si4124DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V /T V Temperature Coefficient 46 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 6.7 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 14 A 0.0062 0.0075 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 12 A 0.0073 0.009 GS D a g V = 15 V, I = 16 A Forward Transconductance 55 S fs DS D b Dynamic Input Capacitance C 3540 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 335 pF oss DS GS Reverse Transfer Capacitance C 142 rss V = 10 V, V = 10 V, I = 16 A 51 77 DS GS D Q Total Gate Charge g 21 32 nC Gate-Source Charge Q 10.7 V = 10 V, V = 4.5 V, I = 16 A gs DS GS D Q Gate-Drain Charge 3.0 gd Gate Resistance R f = 1 MHz 0.75 1.5 g t Turn-on Delay Time 30 45 d(on) t Rise Time V = 20 V, R = 2 14 21 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 38 60 d(off) t Fall Time 11 17 f ns t Turn-on Delay Time 14 21 d(on) t Rise Time V = 20 V, R = 2 10 15 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 32 50 d(off) t Fall Time 815 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 32 S C A I Pulse Diode Forward Current 50 SM Body Diode Voltage V I = 10 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 50 ns rr Body Diode Reverse Recovery Charge Q 19 38 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns Reverse Recovery Rise Time t 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68601 2 S09-0392-Rev. B, 09-Mar-09