SI4116DY-T1-GE3 Vishay

SI4116DY-T1-GE3 electronic component of Vishay
SI4116DY-T1-GE3 Vishay
SI4116DY-T1-GE3 MOSFETs
SI4116DY-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4116DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4116DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI4116DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 25V 18A 5.0W 8.6mohm @ 10V
Datasheet: SI4116DY-T1-GE3 Datasheet (PDF)
Price (USD)
1: USD 1.396 ea
Line Total: USD 1.4 
Availability : 0
  
QtyUnit Price
1$ 1.396
10$ 1.1788
30$ 0.8026
100$ 0.649
500$ 0.6051
1000$ 0.5812

Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.575
10$ 1.3491
100$ 1.0517
500$ 0.8687
1000$ 0.6858


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.575
10$ 1.3491
100$ 1.0517
500$ 0.8687
1000$ 0.6858


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.6668
5000$ 0.6081
12500$ 0.5853


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5989
10$ 1.3923
100$ 1.0729
500$ 0.8505
1000$ 0.6489
5000$ 0.6363


Availability 0
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.575
10$ 1.0708
100$ 0.7634
500$ 0.6214
1000$ 0.5691
2500$ 0.5317
5000$ 0.5237


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.2866
5000$ 0.2803
7500$ 0.2772


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.9582


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.6056


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.591
5000$ 0.5736
7500$ 0.5629


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0216


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.396
10$ 1.1788
30$ 0.8026
100$ 0.649
500$ 0.6051
1000$ 0.5812


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.9333


Availability 0
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.6124
5000$ 0.5872
10000$ 0.5686
20000$ 0.5629
25000$ 0.5573
50000$ 0.5514

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI4116DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4116DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI4116DY-T1-GE3 is a MOSFET manufactured by Vishay that has rated drain-source voltage of 25V, and rated drain-current of 18A. The device has a rated power dissipation of 5.0W with an RDS(on) of 8.6mohm at 10V. It features dynamic dV/dt and dI/dt rating in order to protect the device against dV/dt or dI/dt generated transients. This device supports repetitive avalanche 7.5A, is suitable for body diode applications, and features low gate charge Qg for improved system efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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