Si4620DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.035 at V = 10 V 7.4 GS LITTLE FOOT Plus Power MOSFET 30 4.2 nC 0.052 at V = 4.5 V 6.1 GS Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY APPLICATIONS V (V) F Load Switch for Portable Applications a V (V) Diode Forward Voltage I (A) KA F - Ideal for Boost Circuits 30 0.470 at 3 A 3 HDD Driver SO-8 K D AK1 8 AK2 7 3 6 D S G G 4 5 D Top Vie w S A Ordering Information: Si4620DY-T1-E3 (Lead (Pb)-free) Si4620DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage (MOSFET) V 30 DS Reverse Voltage (Schottky) V 30 V KA V Gate-Source Voltage (MOSFET) 20 GS T = 25 C 7.5 C T = 70 C 6 C Continuous Drain Current (T = 150 C) (MOSFET) I J D T = 25 C 6 A T = 70 C 4.8 A Pulsed Drain Current (MOSFET) I 40 A DM T = 25 C 2.6 C Continuous Source Current (MOSFET Diode Conduction) I S a, b T = 25 C A 1.7 Average Forward Current (Schottky) I 3 F Pulsed Forward Current (Schottky) I 8 FM T = 25 C 3.1 C T = 70 C 2 C Maximum Power Dissipation (MOSFET) a, b T = 25 C A 2 a, b T = 70 C A 1.3 P W D T = 25 C 3 C T = 70 C 1.9 C Maximum Power Dissipation (Schottky) T = 25 C 1.8 A T = 70 C 1.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 Document Number: 73862 www.vishay.com S09-1341-Rev. D, 13-Jul-09 1Si4620DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, c R 53 62.5 Maximum Junction-to-Ambient (MOSFET) thJA R Maximum Junction-to-Foot (Drain) (MOSFET) 30 40 thJF C/W Maximum Junction-to-Ambient (Schottky) R 55 65 thJA R Maximum Junction-to-Foot (Drain) (Schottky) 32 42 thJF Notes: a. Surface Mounted on FR4 board. b. t 10 s. c. Maximum under Steady State conditions for MOSFETS is 110 C/W. d. Maximum under Steady State conditions for Schottky is 115 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V 32.5 DS DS/TJ I = 250 A mV/C D V Temperature Coefficient V - 5.3 GS(th) GS(th)/TJ V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 6 A 0.028 0.035 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.9 A 0.041 0.052 GS D a g V = 15 V, I = 6 A 12 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 520 1040 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 115 230 pF oss DS GS C Reverse Transfer Capacitance 55 110 rss V = 15 V, V = 10 V, I = 6 A 8.6 13 DS GS D Q Total Gate Charge g 4.2 6.5 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 6 A 1.8 gs DS GS D Q Gate-Drain Charge 1.5 gd R Gate Resistance f = 1 MHz 2.8 g t Turn-On Delay Time 16 30 d(on) Rise Time t 36 54 V = 15 V, R = 3.1 r DD L ns I 4.8 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 21 40 d(off) Fall Time t 17 40 f www.vishay.com Document Number: 73862 2 S09-1341-Rev. D, 13-Jul-09