SI4800BDY-T1-GE3 Vishay

SI4800BDY-T1-GE3 electronic component of Vishay
SI4800BDY-T1-GE3 Vishay
SI4800BDY-T1-GE3 MOSFETs
SI4800BDY-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4800BDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4800BDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI4800BDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
Datasheet: SI4800BDY-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.3568 ea
Line Total: USD 1.78 
Availability : 1071
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
5$ 0.3568
50$ 0.2852
150$ 0.191
500$ 0.1459
2500$ 0.1346
5000$ 0.1276

Availability 1071
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3568
50$ 0.2852
150$ 0.191
500$ 0.1459
2500$ 0.1346
5000$ 0.1276

   
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RoHS - XON
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We are delighted to provide the SI4800BDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4800BDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI4800BDY-T1-GE3 is a MOSFET manufactured by Vishay. It is an N-Channel Enhancement Mode Field Effect Transistor designed for high speed switching and power management applications. It has a drain-source voltage of 30V and a maximum drain current of 9A. Its power dissipation is 2.5W with a drain-source on resistance of 18.5mohm at 10V. It also features a low gate charge for improved switching characteristics. It is suitable for high speed switching and power management applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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