New Product Si4804CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.022 at V = 10 V 100 % R Tested 8 GS g COMPLIANT 30 7 100 % UIS Tested 0.027 at V = 4.5 V 7.9 GS APPLICATIONS DC/DC Notebook System Power SO-8 D D 1 2 S 1 8 D 1 1 G D 2 7 1 1 S 3 6 D 2 2 G G 1 2 G D 4 5 2 2 Top View S S 1 2 N-Channel MOSFET Ordering Information: Si4804CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 8.0 C T = 70 C 7.1 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 7.1 b, c T = 70 C 5.5 A I A Pulsed Drain Current (10 s Pulse Width) 30 DM T = 25 C 2.4 C Source-Drain Current Diode Current I S b, c T = 25 C 1.8 A I Pulsed Source-Drain Current 30 SM I Single Pulse Avalanche Current 10 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 5 AS T = 25 C 3.1 C = 70 C T C 2 Maximum Power Dissipation P W D b, c T = 25 C 2 A b, c T = 70 C 1.28 A Operating Junction and Storage Temperature Range T , T C J stg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 49 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 32 40 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 C/W. Document Number: 68924 www.vishay.com S-82485-Rev. A, 13-Oct-08 1New Product Si4804CDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 31 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.1 GS(th) GS(th) J V = V , I = 250 A Gate Threshold Voltage V 1.2 2.4 V GS(th) DS GS D I V = 0 V, V = 20 V Gate Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J b I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 7.5 A 0.018 0.022 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6.5 A 0.022 0.027 GS D b g V = 15 V, I = 7.5 A 20 S Forward Transconductance fs DS D a Dynamic Input Capacitance C 865 iss N-Channel C Output Capacitance 131 pF oss V = 15 V, V = 0 V, f = 1 MHz DS GS Reverse Transfer Capacitance C 66 rss V = 15 V, V = 10 V, I = 7.5 A 15.4 23 DS GS D Q Total Gate Charge g 7 10.5 nC N-Channel Gate-Source Charge Q 2.3 gs V = 15 V, V = 4.5 V, I = 7.5 A DS GS D Q Gate-Drain Charge 2.2 gd Gate Resistance R f = 1 MHz 0.4 1.9 3.8 g t Turn-On Delay Time 918 d(on) N-Channel Rise Time t 12 24 r V = 15 V, R = 3 DD L t Turn-Off Delay Time 17 34 d(off) I 5 A, V = 10 V, R = 1 D GEN g t Fall Time 918 f ns t Turn-On Delay Time 17 34 d(on) N-Channel t Rise Time 13 26 r V = 15 V, R = 3 DD L t Turn-Off Delay Time 19 35 d(off) I 5 A, V = 4.5 V, R = 1 D GEN g t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.4 S C A a I 30 Pulse Diode Forward Current SM Body Diode Voltage V I = 1.8 A 0.77 1.1 V SD S t Body Diode Reverse Recovery Time 16 32 ns rr Q Body Diode Reverse Recovery Charge 816 nC rr N-Channel I = 5 A, dI/dt = 100 A/s, T = 25 C t F J Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 6 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 % Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68924 2 S-82485-Rev. A, 13-Oct-08