New Product Si4825DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free d V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 100 % R Tested 0.0125 at V = - 10 V - 14.9 g GS RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.0205 at V = - 4.5 V - 11.6 GS APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4825DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 25 GS T = 25 C - 14.9 C T = 70 C - 11.9 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 10.9 A a, b T = 70 C - 8.6 A A I - 60 Pulsed Drain Current DM T = 25 C - 4.1 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 2.2 A I Avalanche Current - 20 AS L = 0.1 mH E Single-Pulse Avalanche Energy 20 mJ AS T = 25 C 5.0 C T = 70 C 3.2 C P Maximum Power Dissipation W D a, b T = 25 C 2.7 A a, b T = 70 C 1.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 38 46 thJA C/W R Maximum Junction-to-Foot Steady State 20 25 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 C/W. d. Based on T = 25 C. C Document Number: 68926 www.vishay.com S-82484-Rev. A, 13-Oct-08 1New Product Si4825DDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 34 mV/ DS DS J I = - 250 A D C V Temperature Coefficient V /T 5.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.4 - 2.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 25 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 10 A 0.010 0.0125 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 8 A 0.0165 0.0205 GS D a g V = - 10 V, I = - 10 A 28 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2550 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 455 pF oss DS GS C Reverse Transfer Capacitance 390 rss V = - 15 V, V = - 10 V, I = - 10 A 57 86 DS GS D Q Total Gate Charge g 29.5 45 nC Q V = - 15 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 8 gs DS GS D Q Gate-Drain Charge 22 gd R Gate Resistance f = 1 MHz 0.5 2.2 4.4 g t Turn-On Delay Time 13 25 d(on) t V = - 15 V, R = 1.5 Rise Time 12 24 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 40 70 d(off) D GEN g t Fall Time 918 f ns t Turn-On Delay Time 48 80 d(on) t V = - 15 V, R = 1.5 Rise Time 92 160 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 34 60 d(off) D GEN g t Fall Time 19 35 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 4.1 S C A Pulse Diode Forward Current I - 60 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.75 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 27 45 ns rr Body Diode Reverse Recovery Charge Q 16 27 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 12 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68926 2 S-82484-Rev. A, 13-Oct-08