New Product Si4776DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Max. I (A) Q (Typ.) Definition DS DS(on) D g SkyFET Monolithic TrenchFET Power 0.016 at V = 10 V 11.9 GS 30 5.5 nC MOSFET and Schottky Diode 0.020 at V = 4.5 V 10.6 GS 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC SO-8 APPLICATIONS Notebook System Power and Memory SD 1 8 - Low Side SD 2 7 D SD 3 6 GD 4 5 Schottky Diode G Top Vie w N-Channel MOSFET Ordering Information: S Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 11.9 C T = 70 C 9.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 9.3 b, c T = 70 C 7.5 A A I Pulsed Drain Current (t = 300 s) 50 DM T = 25 C 3.7 C I Continuous Source-Drain Diode Current S b, c T = 25 C 2.3 A I Single Pulse Avalanche Current 10 AS L = 0.1 mH E Single Pulse Avalanche Energy 5mJ AS T = 25 C 4.1 C T = 70 C 2.6 C P Maximum Power Dissipation W D b, c T = 25 C 2.5 A b, c T = 70 C A 1.6 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit b, d R Maximum Junction-to-Ambient t 10 s 40 50 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 24 30 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 95 C/W. Document Number: 63316 www.vishay.com S11-1658-Rev. A, 15-Aug-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si4776DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0, I = 1 mA Drain-Source Breakdown Voltage 30 DS GS D V V V = V , I = 1 mA Gate-Source Threshold Voltage 12.3 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.013 0.150 DS GS I Zero Gate Voltage Drain Current mA DSS V = 30 V, V = 0 V, T = 100 C 110 DS GS J a I V 5 V, V = 10 V 30 A On -State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.013 0.016 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7 A 0.016 0.020 GS D a g V = 15 V, I = 10 A 30 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 521 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 141 pF oss DS GS Reverse Transfer Capacitance C 57 rss V = 15 V, V = 10 V, I = 10 A 11.6 17.5 DS GS D Q Total Gate Charge g 5.5 8.5 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 1.5 gs DS GS D Q Gate-Drain Charge 1.9 gd R Gate Resistance f = 1 MHz 0.2 0.8 1.6 g t Turn-On Delay Time 12 24 d(on) t Rise Time V = 15 V, R = 1.5 12 24 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 14 28 d(off) t Fall Time 816 f ns Turn-On Delay Time t 10 20 d(on) t Rise Time V = 15 V, R = 1.5 11 22 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 11 22 D GEN g d(off) t Fall Time 612 f Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current I T = 25 C 3.7 S C A a I 50 Pulse Diode Forward Current SM V I = 1 A Body Diode Voltage 0.44 0.55 V SD S Body Diode Reverse Recovery Time t 12 24 ns rr Q Body Diode Reverse Recovery Charge 4.5 9 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 6.5 a ns t Reverse Recovery Rise Time 5.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63316 2 S11-1658-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000